Interdiffused SbN-based Quantum Well on GaAs for 1300-1550 nm Diode Lasers

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nelson Tansu
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Growth Technique ◽  
Gaas Matrix ◽  
Metal Organic ◽  
Experimental Findings ◽  
Organic Chemical Vapor Deposition ◽  
Good Agreement

ABSTRACTA new method to realize InGaAsSbN quantum well (QW) structures on GaAs substrate is presented. This approach combines the established growth technique of InGaAsN and InGaAsSb QWs by metal organic chemical vapor deposition (MOCVD), with a post-growth thermal interdiffusion to achieve high quality interdiffused InGaAsSbN QW for diode lasers emitting at 1300-1550-nm. In addition to presenting the optimized interdiffused SbN-based QW design at 1550-nm, strain-compensated interdiffused InGaAsSb-GaAsN QW structure is also presented. Preliminary experimental findings of N- and Sb-diffusivities in GaAs matrix show good agreement with theory, indicating the feasibility of realizing interdiffused InGaAsSbN QW.

Optical Characteristics of GaAsP/GaInP Quantum Well Grown by Metal-Organic Chemical Vapor Deposition

2014 ◽  
Vol 41 (5) ◽  
pp. 0506002
Author(s):  
苑汇帛 Yuan Huibo ◽  
李林 Li Lin ◽  
乔忠良 Qiao Zhongliang ◽  
孔令沂 Kong Lingyi ◽  
谷雷 Gu Lei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Characteristics ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Comparison of deep level spectra of MBE- and MOCVD-grown InGaAsN

2002 ◽  
Vol 719 ◽  
Author(s):  
R. J. Kaplar ◽  
S. A. Ringel ◽  
Steven R. Kurtz ◽  
A. A. Allerman ◽  
J. F. Klem
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Mbe Growth ◽  
Growth Technique ◽  
Deep Electron Trap ◽  
Metal Organic ◽  
Similar Materials ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractDeep level transient spectroscopy (DLTS) studies of both p-type (uid) and n-type (Sidoped), lattice-matched, 1.05 eV bandgap InGaAsN grown by molecular-beam epitaxy (MBE) are reported, and the results are compared to previous measurements of similar materials grown by metal-organic chemical-vapor deposition (MOCVD). In MBE-grown p-type InGaAsN, two majority-carrier hole traps were observed: H3' (0.37 eV) and H4' (0.51 eV), and no evidence was found for the presence of minority-carrier electron traps. These two traps appear to be similar to two levels, H3 (0.48 eV) and H4 (0.5 eV), previously characterized in MOCVD-grown InGaAsN. In MBE-grown n-type InGaAsN, we observed a shallow distribution of electron levels, E1' (0 < EA < 0.35 eV), as well as a deep electron trap E4' (0.56 eV) and a deep hole trap H5' (0.71 eV). E1' appears to be coincident with a superposition of two levels observed in MOCVD-grown InGaAsN, a shallow distribution termed E1 (0 < EA < 0.20 eV) and a discrete (though broadened) level E3 (0.34 eV). Further, E4' appears to be similar in character to a level observed in MOCVD-grown material, E4 (0.82 eV), although a disparity in activation energy exists. This disparity may be due to a temperature-dependent capture cross-section for one or both levels, a possibility that is currently under investigation. In contrast, H5' appears to have no analogue in MOCVD-grown material and thus may be unique to the MBE growth technique.

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