InAs and InP Quantum Dot Molecules and their Potentials for Photovoltaic Applications

2006 ◽  
Vol 959 ◽  
Author(s):  
Wipakorn Jevasuwan ◽  
Supachok Thainoi ◽  
Songphol Kanjanachuchai ◽  
Somchai Ratanathammaphan ◽  
Somsak Panyakeow
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Growth Parameters ◽  
Crystal Defects ◽  
Droplet Epitaxy ◽  
Intermediate Band ◽  
Molecular Beam Epitaxial ◽  
Quantum Dot Molecules ◽  
Optical Output

ABSTRACTSelf-assembled InAs and InP quantum dot molecules (QDMs) are grown on GaAs substrates using different molecular beam epitaxial (MBE) growth techniques. The structural and optical properties of the two types of QDMs are then compared and reported. Multi-stack high-density (1012 cm-2) InAs QDMs are grown and when inserted into GaAlAs/GaAs heterostructure results in high-efficiency solar cells. As an alternative to InAs, InP QDMs are grown by droplet epitaxy of In and annealing under P2 pressure. While the number of quantum dots per QDM in the case of InP is in the range of 10 to 12 dots, those in the case of InAs can be smaller or much larger depending on exact growth parameters prior to QD growth. Photoluminescence (PL) measurements show that while InAs QDMs provide room-temperature optical output that peaks at 1.1 eV, InP QDMs have no PL output, possibly due to crystal defects created by low-temperature processing associated with droplet epitaxy. Discussion on the practicality of our QDMs as material for intermediate band solar cells is also provided.

Quantum Dot Solar Cells

2014 ◽  
pp. 406-429
Author(s):  
Yoshitaka Okada ◽  
Katsuhisa Yoshida ◽  
Yasushi Shoji
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Research Topics ◽  
Intermediate Band ◽  
Hot Carrier ◽  
Quantum Dot Solar Cells ◽  
High Efficiency Solar Cells ◽  
Hot Carrier Effects ◽  
Low Dimensional

Advanced concepts for high efficiency solar cells such as hot carrier effects, Multi-Exciton Generation (MEG), and Intermediate-Band (IB) absorption in low-dimensional nanostructures are under focused research topics in recent years. Among various potential approaches, this chapter is devoted to the device physics and development of the state-of-the-art technologies for quantum dot-based IB solar cells.

Quantum Dot Solar Cells

2012 ◽  
pp. 163-187
Author(s):  
Yoshitaka Okada ◽  
Katsuhisa Yoshida ◽  
Yasushi Shoji
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Research Topics ◽  
Intermediate Band ◽  
Hot Carrier ◽  
Quantum Dot Solar Cells ◽  
High Efficiency Solar Cells ◽  
Hot Carrier Effects ◽  
Low Dimensional

Advanced concepts for high efficiency solar cells such as hot carrier effects, Multi-Exciton Generation (MEG), and Intermediate-Band (IB) absorption in low-dimensional nanostructures are under focused research topics in recent years. Among various potential approaches, this chapter is devoted to the device physics and development of the state-of-the-art technologies for quantum dot-based IB solar cells.

scholarly journals Performance analysis of high efficiency InxGa1−xN/GaN intermediate band quantum dot solar cells

2018 ◽  
Vol 9 ◽  
pp. 432-439 ◽  
Author(s):  
Injamam Ul Islam Chowdhury ◽  
Jith Sarker ◽  
A.S.M. Zadid Shifat ◽  
Rezoan A. Shuvro ◽  
Abu Farzan Mitul
Keyword(s):  
Solar Cells ◽  
Performance Analysis ◽  
Quantum Dot ◽  
High Efficiency ◽  
Intermediate Band ◽  
Quantum Dot Solar Cells

CONSTRUCTION COMPONENTS ENGINEERING IN INTERMEDIATE BAND SOLAR CELLS

2012 ◽  
Vol 26 (14) ◽  
pp. 1250090 ◽  
Author(s):  
N. E. GORJI ◽  
M. HOUSHMAND ◽  
S. S. DEHKORDI
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Filling Factor ◽  
High Efficiency ◽  
Low Cost ◽  
Maximum Efficiency ◽  
Maximum Point ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

The parameter electron filling factor can be taken as a scale for the electronic states in the intermediate band which should be de-localized and thus the unconfined electrons at the quantum dots. For three different value of electron filling factor, the sunlight concentration effect on the efficiency of a quantum dot solar cell is calculated. The maximum point of efficiency and optimum thickness of the cell obtained under three different sunlight concentrations. We show the importance of electron filling factor as a parameter to be more considered. This parameter can be controlled by the quantum dots size and distance between quantum dot layers in the active region. Analysis of above mentioned parameters suggest that to attain a maximum efficiency, the size of the quantum dots and the distance between the periodically arrayed dot layers have to be optimized. In addition, sunlight concentration is recommended as an effective approach to have high efficiency and low cost level solar cells.

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