CONSTRUCTION COMPONENTS ENGINEERING IN INTERMEDIATE BAND SOLAR CELLS

2012 ◽  
Vol 26 (14) ◽  
pp. 1250090 ◽  
Author(s):  
N. E. GORJI ◽  
M. HOUSHMAND ◽  
S. S. DEHKORDI
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Filling Factor ◽  
High Efficiency ◽  
Low Cost ◽  
Maximum Efficiency ◽  
Maximum Point ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

The parameter electron filling factor can be taken as a scale for the electronic states in the intermediate band which should be de-localized and thus the unconfined electrons at the quantum dots. For three different value of electron filling factor, the sunlight concentration effect on the efficiency of a quantum dot solar cell is calculated. The maximum point of efficiency and optimum thickness of the cell obtained under three different sunlight concentrations. We show the importance of electron filling factor as a parameter to be more considered. This parameter can be controlled by the quantum dots size and distance between quantum dot layers in the active region. Analysis of above mentioned parameters suggest that to attain a maximum efficiency, the size of the quantum dots and the distance between the periodically arrayed dot layers have to be optimized. In addition, sunlight concentration is recommended as an effective approach to have high efficiency and low cost level solar cells.

scholarly journals On the Potential of Silicon Intermediate Band Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 3044 ◽  
Author(s):  
Esther López ◽  
Antonio Martí ◽  
Elisa Antolín ◽  
Antonio Luque
Keyword(s):  
Solar Cells ◽  
Auger Recombination ◽  
Low Cost ◽  
Operating Conditions ◽  
Maximum Efficiency ◽  
Efficiency Gain ◽  
High Concentration ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
High Concentrations

Intermediate band solar cells (IBSCs) have an efficiency limit of 63.2%, which is significantly higher than the 40.7% limit for conventional single gap solar cells. In order to achieve the maximum efficiency, the total bandgap of the cell should be in the range of ~2 eV. However, that fact does not prevent other cells based on different semiconductor bandgaps from benefiting from the presence of an intermediate band (IB) within their bandgap. Since silicon (1.12 eV bandgap) is the dominant material in solar cell technology, it is of interest to determine the limit efficiency of a silicon IBSC, because even a modest gain in efficiency could trigger a large commercial interest if the IB is implemented at low cost. In this work we study the limit efficiency of silicon-based IBSCs considering operating conditions that include the use of non-ideal photon casting between the optical transitions, different light intensities and Auger recombination. The results lead to the conclusion that a silicon IBSC, operating under the conventional model in which the sub-bandgaps add to the total silicon gap, provides an efficiency gain if operated in the medium-high concentration range. The performance of these devices is affected by Auger recombination only under extremely high concentrations.

Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

2017 ◽  
Vol 111 (7) ◽  
pp. 073103 ◽  
Author(s):  
Yeongho Kim ◽  
Il-Wook Cho ◽  
Mee-Yi Ryu ◽  
Jun Oh Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells
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