Pulsed Laser Annealing Effects in High Dose Rate Silicon Implants

1980 ◽  
Vol 1 ◽  
Author(s):  
J.S. Williams ◽  
A. P. Pogany ◽  
D. G. Beanland ◽  
D. J. Chivers ◽  
M. J. Kenny ◽  
...  
Keyword(s):  
Dose Rate ◽  
Laser Power ◽  
Laser Annealing ◽  
Crystalline Silicon ◽  
High Dose Rate ◽  
Threshold Power ◽  
High Dose ◽  
Electrical Measurements ◽  
Pulsed Laser Annealing ◽  
Annealing Effects

ABSTRACTHigh resolution Rutherford backscattering and channelling TEM and electrical measurements have been employed to investigate pulsed-ruby laser annealing effects in high dose rate ion implanted silicon wafers. The laterally non-uniform, part amorphous, part crystalline disordered structure which can result from high dose rate implants has been utilized to investigate the selective removal of amorphous or crystalline damage at near-threshold laser powers. Evidence is found for preferrential recrystallisation of amorphous damage regions over a broad laser power window which is below the threshold power required to melt adjacent crystalline silicon. At laser power levels above the crystalline-to-melt threshold, excellent uniformity in damage removal and electrical properties were obtained over the entire wafer.

Structural Characterization of Dynamic Annealing Effects of P+ Implanted SI

1985 ◽  
Vol 45 ◽  
Author(s):  
Marina Berti ◽  
A.V. Drigo ◽  
E. Gabilli ◽  
R. Lotti ◽  
G. Lulli ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Dose Rate ◽  
Structural Characterization ◽  
Ion Bombardment ◽  
High Dose Rate ◽  
High Dose ◽  
Temperature Range ◽  
Annealing Effects ◽  
Increasing Temperature

ABSTRACTSome renarks about the mechanism for dynamic annealing during high dose rate P implantation of Si are reported. TEM observations and RBS channeling measurements show that the ion bombardment enhances the amorphous to crystalline transformation in the temperature range 200 ≤ T ≤ 600°C. It is found that the ratio between the observed recrystalli-zation velocity and the thermal SPE velocity decreases with increasing temperature. This indicates that a transition temperature must exist between the ion-assisted recrystallization regime and the ?lermal SPE regime. For the energy (100 keV) and the dose rate (60,uA/cm2) used in our experiments the transition temperature is about 700°C.

High-dose rate brachytherapy with surgical excision. An effective combination therapy for treatment of keloids – own experience

2017 ◽  
Vol 5 (3) ◽  
pp. 75-80
Author(s):  
Kalapurmat N. Manjunath ◽  
Mysore S. Venkatesh ◽  
Shetty Roshan ◽  
Koushik Keerthi ◽  
Charith Alva Raam
Keyword(s):  
Combination Therapy ◽  
Dose Rate ◽  
Surgical Excision ◽  
High Dose Rate ◽  
High Dose ◽  
High Dose Rate Brachytherapy ◽  
Effective Combination

NCS Report 7: Recommendations for the calibration of Iridium-192 high dose rate sources

1994 ◽  
Author(s):  
J.L.M. Venselaar ◽  
A.H.L. Aalbers ◽  
W.F.M. Brouwer ◽  
H. Meertens ◽  
J.J. Petersen ◽  
...  
Keyword(s):  
Dose Rate ◽  
High Dose Rate ◽  
High Dose ◽  
Iridium 192
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