Sample Preparation of Aluminum Bridge Test Vehicles for Tem In-Situ Crystallographic Studies of Electromigration

1987 ◽  
Vol 115 ◽  
Author(s):  
W. E. Rhoden ◽  
J. V. Maskowitz ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Circuit Reliability ◽  
Test Vehicle ◽  
Aluminum Films ◽  
Current Densities ◽  
Integrated Circuit Reliability ◽  
A Current

IntroductionElectromigration in aluminum films has been identified as an increasing concern for integrated circuit reliability. Electromigration is the mass transport of atoms in a conductor under a current stress. Electromigration occurs in conductors experiencing current densities greater than 105 A/cm2 and is accelerated by high temperature. The damage to aluminum films manifests itself in the formation of voids, hillocks and whiskers along the conductor. This paper presents a test vehicle preparation procedure which can be used to investigate electromigration.

In situ STEM observations of electromigration on thin aluminum stripes

1986 ◽  
Vol 44 ◽  
pp. 740-741
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Large Scale ◽  
Circuit Reliability ◽  
Vlsi Technology ◽  
Thin Aluminum ◽  
Current Densities ◽  
Short Circuits ◽  
A Current

The existence of electromigration in thin films has been acknowledged since the early sixties. Electromigration is described as the main transport for atoms in a conductor under a current stress. Initial interest had been of a theoretical nature as electromigration had little impact on circuit reliability. With the maturing of Very Large Scale Integrated Circuit (VLSI) technology, current densities are exceeding 106 Amps/cm2 while linestripes are reaching into the submicron range. In this environment, electromigration can cause unwanted open or short circuits in thin films. This has serious implications on the reliability of any integrated circuit. By 1990, millions of transistors may be fabricated on a chip with feature sizes smaller than the wavelength of visible light.

Sign in / Sign up

Export Citation Format

Share Document