Study of Growth Kinetics of Ultra-Long Carbon Nanotube Arrays through Wall Number Statistical Investigation

AbstractThe unique properties of carbon nanotubes (CNTs) strongly depend on their structures. In this study, the growth kinetics of ultra-long multi-walled CNT (MWCNT) arrays by water-assisted chemical vapor deposition (WACVD) has been investigated based on the statistical studies of CNT wall number. It was found that the kinetics of MWCNT arrays in WACVD demonstrated a lengthening and thickening growth. In the linear lengthening stage, CNT wall number remains constant and catalysts preserve the activity; while in the thickening stage, CNTs thicken substantially through the gas phase-induced thickening process and catalysts start to deactivate. The effects of ethylene and hydrogen flow rates on the MWCNT array growth have also been studied. It was found that by changing ethylene flow rate, different linear lengthening stages corresponding to different CNT wall numbers could be obtained. These findings provide experimental solutions to fabrication MWCNT arrays with both selective heights and controllable wall numbers by WACVD.

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Simulation of the Kinetics of Growth of Iron Nanoparticles in the Process of Chemical Vapor Deposition of Hydrocarbons with Injection of Ferrocene for the Synthesis of Carbon-Nanotube Arrays

Journal of Engineering Physics and Thermophysics ◽

10.1007/s10891-015-1327-y ◽

2015 ◽

Vol 88 (6) ◽

pp. 1432-1441 ◽

Cited By ~ 9

Author(s):

S. I. Futko ◽

B. G. Shulitskii ◽

V. A. Labunov ◽

E. M. Ermolaeva

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Nanotube ◽

Vapor Deposition ◽

Iron Nanoparticles ◽

Chemical Vapor ◽

Nanotube Arrays ◽

Carbon Nanotube Arrays ◽

Kinetics Of

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Growth Kinetics of Wall-Number Controlled Carbon Nanotube Arrays

The Journal of Physical Chemistry C ◽

10.1021/jp911629j ◽

2010 ◽

Vol 114 (8) ◽

pp. 3454-3458 ◽

Cited By ~ 17

Author(s):

Duck Hyun Lee ◽

Sang Ouk Kim ◽

Won Jong Lee

Keyword(s):

Carbon Nanotube ◽

Growth Kinetics ◽

Nanotube Arrays ◽

Carbon Nanotube Arrays ◽

Kinetics Of

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Parametric Investigation of the Kinetics of Growth of Carbon-Nanotube Arrays on Iron Nanoparticles in the Process of Chemical Vapor Deposition of Hydrocarbons

Journal of Engineering Physics and Thermophysics ◽

10.1007/s10891-015-1201-y ◽

2015 ◽

Vol 88 (2) ◽

pp. 364-373 ◽

Cited By ~ 5

Author(s):

S. I. Futko ◽

B. G. Shulitski ◽

V. A. Labunov ◽

E. M. Ermolaevaa

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Nanotube ◽

Vapor Deposition ◽

Iron Nanoparticles ◽

Chemical Vapor ◽

Nanotube Arrays ◽

Parametric Investigation ◽

Carbon Nanotube Arrays ◽

Kinetics Of

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Growth kinetics of chemically vapor deposited SiO2 films from silane oxidation

Journal of Materials Research ◽

10.1557/jmr.1998.0322 ◽

1998 ◽

Vol 13 (8) ◽

pp. 2308-2314 ◽

Cited By ~ 2

Author(s):

Fernando Ojeda ◽

Alejandro Castro-García ◽

Cristina Gómez-Aleixandre ◽

José María Albella

Keyword(s):

Gas Phase ◽

Deposition Rate ◽

Growth Kinetics ◽

Film Growth ◽

Chemical Vapor ◽

Intermediate Species ◽

Pressure Oxygen ◽

Pressure Chemical ◽

Different Temperatures ◽

Kinetics Of

The growth kinetics of SiO2 thin films obtained by low-pressure chemical vapor deposition (CVD) from SiH4/O2/N2 gas mixtures has been determined at different temperatures and flow rates. The results show that the film growth is originated by some intermediate species (e.g., SiOxHy) produced in the gas phase. At low temperatures the deposition rate is limited by some homogeneous reaction with an apparent activation energy of 1.42 eV. Furthermore, the observation of critical limits when total pressure, oxygen/silane flow ratio, and temperature are decreased gives support to a branching-chain mechanism of deposition. Finally, we have observed that the deposition rate shows a hysteresis behavior when varying the temperature within the 300–400 °C range, which has been attributed to the inhibition of silane oxidation by the Si–OH surface groups of the films grown on the reactor walls.

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