CdTe Solar Cells at CEA / LETI

AbstractThe present communication will present the results obtained at CEA/LETI in Grenoble, France, in the frame of an experimental work finalized to directly test the criticalities and chances of this technology row. By means of Closed Space Sublimation (CSS) and Chemical Bath Deposition (CBD) processes, appropriate annealing treatments and specific CdTe-contacting procedures, we reached the state-of-art of this technology with about 15% conversion efficiency under standard illumination conditions in “superstrate” cells configuration both for structures deposited on 3 mm thick low-iron containing sodalime glass (SLG) and Borosilicate glass (BSG).

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Development of plasma enhanced closed space sublimation for the deposition of CdS:O in CdTe solar cells

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc.2013.6744184 ◽

2013 ◽

Cited By ~ 2

Author(s):

D E Swanson ◽

S R Hafner ◽

W S Sampath ◽

J D Williams

Keyword(s):

Solar Cells ◽

Closed Space ◽

Cdte Solar Cells ◽

Closed Space Sublimation ◽

Space Sublimation

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Fabrication of Sb2S3 planar thin film solar cells with closed-space sublimation method

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8547305 ◽

2018 ◽

Author(s):

Yiyu Zeng ◽

Fangyang Liu ◽

Martin Green ◽

Xiaojing Hao

Keyword(s):

Thin Film ◽

Solar Cells ◽

Thin Film Solar Cells ◽

Closed Space ◽

Closed Space Sublimation ◽

Sublimation Method ◽

Space Sublimation

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Metal chloride passivation treatments for CdTe solar cells

MRS Proceedings ◽

10.1557/opl.2013.984 ◽

2013 ◽

Vol 1538 ◽

pp. 269-274 ◽

Cited By ~ 2

Author(s):

Jennifer Drayton ◽

Russell Geisthardt ◽

John Raguse ◽

James R. Sites

Keyword(s):

Device Performance ◽

Closed Space ◽

Doping Density ◽

Cdte Solar Cells ◽

Density Depletion ◽

Current Voltage ◽

Depletion Width ◽

Capacitance Voltage ◽

Closed Space Sublimation ◽

Space Sublimation

ABSTRACTThe traditional CdCl2 passivation of CdTe is expanded by adding other chlorides such as MgCl2, NaCl, and MnCl2 into the process through a two-step passivation procedure that combines closed space sublimation step with a vapor process. This allows the possibility of forming a highly doped field at the back of the device that could act as an electron reflector that could boost device performance by directing electrons back into the absorber layer and increasing the voltage while limiting recombination at the back of the device. The effects the two-step passivation process on device performance are characterized by current-voltage measurements, and by electroluminescence and laser-beam induced current images to show the degree of device uniformity. Additionally, capacitance voltage measurements are used to study doping density, depletion width, and possible formation of a field at the back of the device.

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Assessment of Photovoltaic Junction Position in CdTe Solar Cells Using a Combined FIB-EBIC Technique

MRS Proceedings ◽

10.1557/opl.2012.1031 ◽

2012 ◽

Vol 1432 ◽

Cited By ~ 3

Author(s):

Jonathan D. Major ◽

Leon Bowen ◽

Robert E. Treharne ◽

Ken Durose

Keyword(s):

Solar Cells ◽

Secondary Electron ◽

Ion Beam ◽

Rf Sputtering ◽

Cdte Solar Cells ◽

Close Space Sublimation ◽

Focussed Ion Beam ◽

Electron Beam Induced Current ◽

Space Sublimation

ABSTRACTTwo issues relating to the determination of junction position in thin film CdTe solar cells have been investigated. Firstly, the use of a focussed ion beam (FIB) milling as a method of sample preparation for electron beam induced current (EBIC) analysis is demonstrated. It is superior to fracturing methods. High quality secondary electron and combined secondary electron/EBIC images are presented and interpreted for solar cells with CdTe layers deposited by both close space sublimation (CSS) or RF sputtering. Secondly, it was shown that in an RF-sputtered CdTe device, while the photovoltaic junction was buried ~1.1 μm from the metallurgical interface, the shape of the external quantum efficiency (EQE) curve did not indicate the presence of a buried homo-junction. SCAPS modelling was used to verify that EQE curve shapes are not sensitive to junctions buried < 1.5μm from the CdTe/CdS interface.

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