Pulsed Laser Processing of Electrodeposited CuInSe2 Photovoltaic Absorber Thin Films

2010 ◽  
Vol 1268 ◽  
Author(s):  
Ashish Bhatia ◽  
Phillip Dale ◽  
Matt Nowell ◽  
Michael Scarpulla
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Laser Processing ◽  
Laser Annealing ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Ultra Violet ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
The Cost

AbstractCuInSe2 (CIS) is commercially processed using energy intensive vacuum processes such as sputtering and thermal evaporation followed by thermal annealing. In order to reduce the cost of fabricating CIS photovoltaic absorber layers we need fast and cheap processing methods. We have investigated the use of non-vacuum electrochemical deposition (ED) followed by ultra violet pulsed laser annealing (UV-PLA). We report here on the results of ns pulsed KrF irradiation of ED CIS films and ED CIS films which were first annealed in a Se atmosphere.

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

scholarly journals Pulsed Laser Annealing Effect on Optical and Structural Properties of ZnS/ZnSe Heterostructures

2019 ◽  
Vol 6 (1) ◽  
pp. 23-29
Author(s):  
Haidar Howari
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Reflection Spectra ◽  
Pulsed Laser Annealing ◽  
Before And After ◽  
Transmission And Reflection Spectra ◽  
Transmission And Reflection

Studies of pulsed laser annealing (PLA) on semiconductor thin films were performed to examine changes of the optical and structural parameters due to the laser heat. Thin films of ZnS/ZnSe were deposited on quartz substrates at a pressure of 8.2*10-6 mbar using PVD technique. These thin films were annealed at different laser powers using CO2 pulsed laser. Transmission and reflection spectra were recorded before and after the annealing process. A decrease in the transmission and reflection spectra after annealing is observed. The absorption coefficient, refractive index, damping coefficient and dielectric constant were calculated before and after the annealing process. Changes in the optical parameters are found after the annealing process. The energy band gaps of ZnS and ZnSe have been determined. Upon annealing, an increase in the absorption coefficient is observed which is due to an improvement in the granular nanostructure of the ZnS/ZnSe thin films. XRD patterns of the prepared samples were obtained before and after the annealing procedure and revealed an enhancement in the crystallite structure upon annealing.

X-ray studies: CO2 pulsed laser annealing effects on the crystallographic properties, microstructures and crystal defects of vacuum-deposited nanocrystalline ZnSe thin films

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7120-7129 ◽  
Author(s):  
Ahmed Saeed Hassanien ◽  
Alaa A. Akl
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Crystal Defects ◽  
Microstructural Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Annealing Effects ◽  
Znse Thin Films

The influence of CO2 pulsed laser annealing on microstructural properties and crystal defects of nanocrystalline ZnSe thin films have been studied. X-ray diffraction was utilized to study these issues. Laser annealing led to enhance the film quality and decrease the crystal defects.

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