Soft Magnetism and Morphology of Fe Films by Dual Ion Beam Sputtering

1988 ◽  
Vol 128 ◽  
Author(s):  
M. Nagakubo ◽  
T. Yamamoto ◽  
M. Naoe

ABSTRACTFe films have been deposited by using dual ion beam sputtering apparatus under various conditions, and the dependence of their magnetic properties and morphology on preparation parameters such as film thickness, δt, and argon gas pressure, PAr, have been investigated in detail. The saturation magnetiza ion 4πMs of the specimen films did not change remarkably with 6t in the range of 50 ∼1000nm. However, with decrease of 6t below 50 nm, 4πMs decreased to less than 20 kG and coercivity Hc increased to more than 16 Oe. As PAr increased from 0.5 to 1.6 mTorr without ion bombardment, 4πMs decreased to less than 20 kG and Hc increased to about 20 Oe. The SEM micrographs of these films deposited at higher PAr showed the columnar structure. On the other hand, the films deposited at Yower PAr and ones bombarded by argon ions with proper kinetic energy during deposition did not present any texture and exhibited better soft magnetism. Such a morphology may be attributed to the difference in arrival energy of sputtered Fe particles to film surface and related closely to soft magnetism. It has been found that the dual ion beam sputtering method can control 4πMs and Hc with changing PAr and so prepare Fe films with superior soft magnetism by adjusting the kinetic energy of bombarding argon ions at lower PAr.


1985 ◽  
Vol 58 ◽  
Author(s):  
Y. Hoshi ◽  
M. Naoe

ABSTRACTFe-Si, Co-Ta and Co-Zr amorphous films have been deposited by using various sputtering methods (conventional rf diode sputtering, rf triode sputtering, dc Targets Facing type sputtering (dc TF sputtering) and dual ion beam sputtering (DIB sputtering)). The lower limit of the Si and Ta content to form amorphous Fe-Si and Co-Ta films changes significantly with the sputtering method. These differences between the sputtering methods are mainly caused by the differences in the plasma potential which affects the amount of ion bombardment to the film surface during sputtering,and the minimum content of Si or Ta to obtain amorphous films decreases as the plasma potential increases. These results indicate that the ion bombardment suppresses the growth of crystallites and promotes the formation of the films with amorphous structures. This is confirmed by the deposition of Co-Ta and Co-Zr amorphous films under the condition of various amount of ion bombardment by using a DIB sputtering system.



1986 ◽  
Vol 80 ◽  
Author(s):  
M. Nagakubo ◽  
A. Kawano ◽  
M. Naoe

AbstractPure iron thin films with soft magnetic properties and good chemical stabilities have been prepared by Dual Ion Beam Sputtering (DIBS). Four kinds of gas, that is, hydrogen, helium, nitrogen and argon were introduced respectively to the auxiliary ion source as the additional element in the film and also for the purpose of bombardment during deposition. The dependence of crystal structure and magnetic properties of the films on the preparation condition, especially, on the effect of various gases added in the films by ion bombardment onto the depositing film surface, has been investigated.Saturation magnetization 4πMs of iron film including gas atoms is usually smaller than that of bulk iron which has 4πMs of 21.5kG. For example, 4πMs of the film prepared by conventional planer magnetron sputtering remains about 15kG. Such a remarkable difference in 4πMs may be primarily attributed to the considerable amount of argon atoms included in the film due to argon pressure as high as 10mTorr. It may be also caused by high energy particles bombarding onto the iron film surface during deposition. On the other hand, pure iron thin films prepared by Dual Ion Beam Sputtering can have 47Ms as high as 21.5kG, and coercive force Hc as low as about 4 Oe by controlling the ratio of sputtering iron atoms to argon gas atoms, impinging onto the substrate, and the arrival energies both of them. Magnetic properties and crystal structures of the iron thin films depend significantly on the kind of added gas. In this study, it has been found that bombardment and addition of adequate gas atoms with proper energy results in an improvement of atomic ordering and microscopic uniformity in the films.



2014 ◽  
Vol 22 (25) ◽  
pp. 30983 ◽  
Author(s):  
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Vishnu Awasthi ◽  
Shruti Verma ◽  
Shaibal Mukherjee


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Vol 223 (1) ◽  
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Author(s):  
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Jie Li ◽  
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