Doping Study of Se into AlGaAs Layers Grown by MBE, and their Application to HEMT Structures
Keyword(s):
Si Doped
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ABSTRACTWe studied doping Se into AlGaAs layers using PbSe as a dopant source for molecular beam epitaxy (MBE). Good controllability and abruptness equivalent to that of Si-doping were obtained. Se-doping was successfully applied to HEMT structures with reduced DX center concentrations. The two dimensional electron gas (2DEG) characteristics of these structures were comparable to those of Si-doped structures.
1992 ◽
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pp. 2075-2078
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pp. 819-823
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pp. 2675
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pp. 399-403
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pp. 5196-5201
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