Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon From Dichlorosilane

1990 ◽  
Vol 182 ◽  
Author(s):  
Ahmad Kermani ◽  
Kristian E. Johnsgard ◽  
Sailish Suthar ◽  
Ki-Bum Kim ◽  
Chung Lam
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Grain Size Analysis ◽  
Thermal Chemical Vapor Deposition ◽  
Poly Silicon ◽  
Polysilicon Films

AbstractRapid Thermal Chemical Vapor Deposition (RTCVD) of undoped and insitu doped polycrystalline silicon films has been accomplished in a cold-wall reactor. Dichlorosilane was used for the silicon source and AsH3 gas was used as the dopant source. Thedeposition kinetics of poly-silicon films on silicon dioxide over a range of deposition temperatures, pressures and carrier gas chemistries was studied. Both blanket and selective deposition modes were examined. The poly-silicon films were examined by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for morphology and grain size analysis. Using X-ray diffraction technique, preferred grain orientation dependency of poly-silicon films on growth conditions was investigated. Dopant incorporation, dopant activation and oxygen content of polysilicon films were measured by secondary ion mass spectrometry (SIMS), four point probe, and spreading resistance profiling (SRP) techniques.This paper is to report the results of material characterization of polysilicon films deposited by RTCVD, and to address the applications and advantages of ‘Integrated Processing’ technology involving deposition of polysilicon.

Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Silicon Films ◽  
Production Mechanism ◽  
Cvd Method ◽  
Poly Silicon ◽  
Deposition Conditions

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition

2005 ◽  
Vol 862 ◽  
Author(s):  
Charles W. Teplin ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert Reedy ◽  
Bobby To ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Silicon Films ◽  
Hot Wire ◽  
Transmission Electron ◽  
Increasing Temperature

AbstractWe have studied silicon films grown epitaxially on silicon wafers using hot-wire chemical vapor deposition (HWCVD) with a tantalum filament. Silicon films were grown on (100)-oriented hydrogen terminated silicon wafers at temperatures from 175°C to 480°C, using a Ta filament 5 cm from the substrate to decompose pure SiH4 gas. The progression of epitaxy was monitored using real-time spectroscopic ellipsometry (RTSE). Analysis using RTSE, transmission electron microscopy (TEM), and scanning electron microscopy shows that at a characteristic thickness, hepi all of the films break down into a-Si:H cones. Below 380°C, both hepi and the thickness of the transition to pure a-Si:H increase with increasing temperature. Above 380°C, hepi was not observed to increase further but TEM images show fewer defects in the epitaxial regions. Secondary ion-mass spectrometry shows that the oxygen concentration remains nearly constant during growth (<1018 cm-3). The hydrogen concentration is found to increase substantially with film thickness from 5·1018 to 5·1019 cm-3, likely due to the incorporation of hydrogen into the a-Si:H cones that grow after the breakdown of epitaxy.

Effects of Fe film Thickness and Ammonia on the Growth Behavior of Carbon Nanotubes grown by thermal Chemical Vapor Deposition

2001 ◽  
Vol 706 ◽  
Author(s):  
Jung Inn Sohn ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seonghoon Lee
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Region ◽  
Film Deposition ◽  
Condition Dependence ◽  
Pretreatment Condition ◽  
Thermal Chemical Vapor Deposition

AbstractThe growth behaviour of carbon nanotubes on the Fe-deposited Si (001) substrates by thermal chemical vapor deposition (CVD) has been investigated using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The Fe films are deposited for 20 s–20 min by pulse-laser deposition. SEM results show that the growth characteristics of carbon nanotubes strongly depend on the Fe film deposition time. TEM and SEM results show that the pretreatment annealing at 800 °C causes the continuous Fe films to be broken up into nanoparticles 8–50 nm across and discontinuous islands 100 nm– 1.1 μm in size. It is shown that the Fe nanoparticles are essentially required for the formation of aligned carbon nanotubes. SEM results show that the growth behaviors of carbon nanotubes are strongly dependent on the pretreatment atmospheres. In addition, for the Ar gas-pretreated sample, a carbonaceous layer is formed near the surface region. TEM results show direct evidence that a base growth mode is responsible for the growth of carbon nanotubes in the present work. Based on the microscopy results, the pretreatment condition dependence of the growth behaviors of carbon nanotubes is discussed.

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