Continuous growth of polycrystalline silicon films by chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(82)90449-3 ◽

1982 ◽

Vol 56 (2) ◽

pp. 313-323 ◽

Author(s):

Kalluri R. Sarma ◽

M. John Rice

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Continuous Growth ◽

Polycrystalline Silicon Films

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Structural properties of polycrystalline silicon films prepared at low temperature by plasma chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.349732 ◽

1991 ◽

Vol 70 (12) ◽

pp. 7374-7381 ◽

Author(s):

H. Kakinuma ◽

M. Mohri ◽

M. Sakamoto ◽

T. Tsuruoka

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Structural Properties ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Polycrystalline Silicon Films

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Device-quality polycrystalline silicon films deposited at low process temperatures by hot-wire chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(98)01477-1 ◽

1999 ◽

Vol 337 (1-2) ◽

pp. 248-252 ◽

Author(s):

S.C. Saha ◽

J. Guillet ◽

B. Equer ◽

J.E. Bourée

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Polycrystalline Silicon Films

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Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

Journal of Applied Physics ◽

10.1063/1.373867 ◽

2000 ◽

Vol 88 (3) ◽

pp. 1655-1663 ◽

Author(s):

J. Pejnefors ◽

S.-L. Zhang ◽

H. H. Radamson ◽

J. V. Grahn ◽

M. Östling

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Reduced Pressure ◽

Polycrystalline Silicon Films

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Synthesis of oriented and passivated polycrystalline silicon films on glass by hot wire chemical vapor deposition

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) ◽

10.1109/pvsc.2014.6925162 ◽

2014 ◽

Author(s):

Gurleen Kaur ◽

Md Abul Hossion ◽

Kulasekaran M ◽

Brij Mohan Arora

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Polycrystalline Silicon Films

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Low Temperature Growth of Polycrystalline Silicon Films by Hot-Wire Chemical Vapor Deposition Using SiCl4/H2 Gases

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l1207 ◽

2001 ◽

Vol 40 (Part 2, No. 11B) ◽

pp. L1207-L1210 ◽

Author(s):

Te-Chi Wong ◽

Jih-Jen Wu

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Temperature Growth ◽

Low Temperature Growth ◽

Polycrystalline Silicon Films

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Control of Preferential Orientation in Polycrystalline Silicon Films Prepared by Plasma‐Enhanced Chemical Vapor Deposition

Journal of The Electrochemical Society ◽

10.1149/1.2086285 ◽

1990 ◽

Vol 137 (11) ◽

pp. 3666-3674 ◽

Author(s):

S. Hasegawa ◽

S. Yamamoto ◽

Y. Kurata

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Preferential Orientation ◽

Polycrystalline Silicon Films

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Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2012.05.009 ◽

2012 ◽

Vol 520 (18) ◽

pp. 5860-5866 ◽

Author(s):

Bing-Rui Wu ◽

Shih-Yung Lo ◽

Dong-Sing Wuu ◽

Sin-Liang Ou ◽

Hsin-Yuan Mao ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Direct Growth ◽

Polycrystalline Silicon Films ◽

Induced Crystallization

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Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2gas mixture at 350 °C

Applied Physics Letters ◽

10.1063/1.111781 ◽

1994 ◽

Vol 64 (14) ◽

pp. 1865-1867 ◽

Author(s):

Toshiki Kaneko ◽

Masatoshi Wakagi ◽

Ken‐ichi Onisawa ◽

Tetsuroh Minemura

Keyword(s):

Chemical Vapor Deposition ◽

Radio Frequency ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Radio Frequency Plasma ◽

Frequency Plasma ◽

Polycrystalline Silicon Films

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P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition

Applied Surface Science ◽

10.1016/0169-4332(94)00420-x ◽

1995 ◽

Vol 86 (1-4) ◽

pp. 600-603 ◽

Author(s):

J. Puigdollers ◽

J. Cifre ◽

M.C. Polo ◽

J.M. Asensi ◽

J. Bertomeu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Polycrystalline Silicon Films

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Free carrier optical absorption used to analyze the electrical properties of polycrystalline silicon films formed by plasma enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(00)01793-4 ◽

2001 ◽

Vol 383 (1-2) ◽

pp. 248-250 ◽

Author(s):

T. Watanabe ◽

T. Sameshima ◽

K. Nakahata ◽

T. Kamiya ◽

I. Shimizu

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Optical Absorption ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Free Carrier ◽

Silicon Films ◽

Polycrystalline Silicon Films

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