Low Temperature RF Plasma Annealing Using A NH3-N2 Gas Mixture

1990 ◽  
Vol 190 ◽  
Author(s):  
K. Aite ◽  
F.W. Ragay ◽  
J. Middelhoek ◽  
R. Koekoek
Keyword(s):  
Low Temperature ◽  
Rf Plasma ◽  
Gas Mixture ◽  
Plasma Annealing

Novel low temperature RF plasma annealing using NH3−2gas mixture

1990 ◽  
Vol 26 (11) ◽  
pp. 733-734
Author(s):  
K. Aite ◽  
F.W. Ragay ◽  
J. Middelhoek
Keyword(s):  
Low Temperature ◽  
Rf Plasma ◽  
Plasma Annealing

Enhancement of IR transparency of arsenic sulfide materials via plasma-chemical conversion of the initial arsenic monosulfide in low-temperature RF plasma

2018 ◽  
Vol 52 (1) ◽  
pp. 015203 ◽  
Author(s):  
Leonid Mochalov ◽  
Alexander Logunov ◽  
Roman Kornev ◽  
Sergey Zelentsov ◽  
Andrey Vorotyntsev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Conversion ◽  
Rf Plasma ◽  
Arsenic Sulfide ◽  
Plasma Chemical

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

1998 ◽  
Vol 533 ◽  
Author(s):  
A. Morrya ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota ◽  
I. Kawashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Partial Pressure ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Deposition Rate ◽  
Epitaxial Films ◽  
Similar Degree ◽  
Gas Mixture ◽  
Heavy Doping

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.

Impact of low temperature plasma annealing for flexible, transparent and conductive ITO/PEDOT:PSS composite electrode

2021 ◽  
Vol 93 ◽  
pp. 423-429
Author(s):  
Vivekanandan Raman ◽  
Yong-Hwan Cho ◽  
Jin-Hyeok Park ◽  
Deviprasath Chinnadurai ◽  
Han-Ki Kim
Keyword(s):  
Low Temperature ◽  
Composite Electrode ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Plasma Annealing

Effect of Low Temperature RF Plasma Treatment on Electrical Properties of Junctionless InGaAs MOSFETs

2019 ◽  
Vol 8 (2) ◽  
pp. Q24-Q31
Author(s):  
Y. V. Gomeniuk ◽  
Y. Y. Gomeniuk ◽  
T. E. Rudenko ◽  
P. N. Okholin ◽  
V. I. Glotov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Rf Plasma

Optical Emission Spectroscopy Measurement of Ar\H2\CH4 RF Plasma for Nano-Crystal Diamond Film Deposition

2014 ◽  
Vol 1035 ◽  
pp. 373-378 ◽  
Author(s):  
Yan Chao Shi ◽  
Qin Jian Zhang ◽  
Jia Jun Li ◽  
Guang Chao Chen
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Diamond Films ◽  
Optical Emission ◽  
Film Deposition ◽  
Rf Plasma ◽  
Gas Mixture ◽  
Technical Application ◽  
Plasma Enhanced Cvd ◽  
Nano Crystal

Ar\H2\CH4 gas mixture was utilized to grow nanocrystal diamond films in a RF plasma enhanced CVD system. CH4\ H2 ratios were changed to study the effect of plasma radicals on the deposit, in which optical emission spectroscopy (OES) was applied to analyze the plasma radicals. It was found that Hα, Hβ, Hγ, CH, C2 were the main radicals in the plasma. Among them, the CH intensity of OES was usually quite strong and increased sharply when the ratio of CH4/H2 was greater than 3%. The intensity of C2 was weak and basically unchanged with the addition of methane. This study can provide a new possible technical application for depositing NCD films.

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