Thermal-CVD Produced Amorphous-Silicon Thin-Film Transistors-Ambipolar Characteristics
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ABSTRACTAmorphous-silicon thin-film transistors (a-Si TFTs) have been fabricated by using an a-Si layer deposited by low-temperature thermal-CVD method using higher silanes. The TFT with thermally grown SiO2 gate was operated in both the n-channel mode and the p-channel mode. The maximum field-effect mobility and typical on/off current ratio were 1.5 cm2/Vs and 107 for the n-channel operation, and 0.2 cm2/Vs and 106 for the p-channel operation, respectively. Free electron mobility in the conduction band and free hole mobility in the valence band have been estimated, using the temperature dependence of the field-effect mobilities. It was found that the hole mobility is as high as the electron mobility.
1988 ◽
Vol 27
(Part 2, No. 11)
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pp. L2010-L2012
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1988 ◽
Vol 58
(4)
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pp. 389-410
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1988 ◽
Vol 27
(Part 2, No. 10)
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pp. L1955-L1957
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2009 ◽
Vol 30
(5)
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pp. 502-504
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