A self‐consistent analysis of temperature‐dependent field‐effect measurements in hydrogenated amorphous silicon thin‐film transistors
1986 ◽
Vol 60
(2)
◽
pp. 643-649
◽
R. E. I. Schropp
◽
J. Snijder
◽
J. F. Verwey
1988 ◽
Vol 58
(4)
◽
pp. 389-410
◽
R. Schumacher
◽
P. Thomas
◽
K. Weber
◽
W. Fuhs
◽
F. Djamdji
◽
...
N. Lustig
◽
J. Kanicki
◽
R. Wisnieff
◽
J. Griffith
1982 ◽
Vol 41
(6)
◽
pp. 558-560
◽
1990 ◽
Vol 68
(7)
◽
pp. 3439-3442
◽
Byung‐Seong Bae
◽
Choochon Lee
1991 ◽
Vol 69
(4)
◽
pp. 2339-2345
◽
J. Kanicki
◽
F. R. Libsch
◽
J. Griffith
◽
R. Polastre
2002 ◽
Vol 20
(3)
◽
pp. 1038-1042
◽
2007 ◽
Vol 46
(3B)
◽
pp. 1318-1321
◽
Huai-Yuan Tseng
◽
Ko-Yu Chiang
◽
Hau-Yan Lu
◽
Chen-Pang Kung
◽
Ting-Chang Chang
1989 ◽
Vol 175
◽
pp. 37-42
◽
1995 ◽
Vol 30
(9)
◽
pp. 2254-2256
◽
Bor -Yir Chen
◽
Wei -Hsiung Wu
◽
Jiann -Ruey Chen
◽
Chum -Sam Hong
1993 ◽
Vol 74
(8)
◽
pp. 5231-5240
◽