Collisional Energy Deposition Threshold for Extended Damage Depths in Ion-Implanted Silicates

1991 ◽  
Vol 235 ◽  
Author(s):  
G. W. Arnold ◽  
G. Battaglin ◽  
A. Boscolo-Boscoletto ◽  
F. Caccavalle ◽  
G. De Marchi ◽  
...  

ABSTRACTMany properties of implanted fused silica (e.g., surface stress, hardness) exhibit maximum implantation-induced changes for collisional energy deposition values of ∼1020 keV/cm3. We have observed a second critical energy deposition threshold value of about 1022 keV/cm3 in stress and hardness measurements as well as in many other experiments on silicate glasses (leaching, alkali depletion, etching rate, gaseous implant redistribution). The latter show evidence for damage depths exceeding TRIM ranges by about a factor of 2. For crystalline quartz, a similar threshold value value has been found for extended damage depths (greater than TRIM) for 250 kev ions (H-Au) as measured by RBS and interference fringes. This phenomenon at high damage deposition energy may involve the large stress gradients between damaged and undamaged regions and the much increased diffusion coefficient for defect transport.

1996 ◽  
Vol 145 ◽  
pp. 109-117 ◽  
Author(s):  
H.-Th. Janka ◽  
E. M. Müller

Hydrodynamical simulations of type-II supernovae in one and two dimensions are performed for the revival phase of the delayed shock by neutrino energy deposition. Starting with a post-collapse model of the 1.31 Mʘ iron core of a 15 Mʘ star immediately after the stagnation of the prompt shock about 10 ms after core bounce, the models are followed for several hundred milliseconds with varied neutrino fluxes from the neutrino sphere. The variation of the neutrino luminosities is motivated by the considerable increase of the neutrino emission due to convective processes inside and close to the neutrino sphere (see Janka 1993), which are driven by negative gradients of entropy and electron concentration left behind by the prompt shock (Burrows & Fryxell 1992, Janka & Müller 1992). The size of this luminosity increase remains to be quantitatively analyzed yet and may require multi-dimensional neutrino transport. However, in the presented simulations the region below the neutrino sphere is cut out and replaced by an inner boundary condition, so that the convective zone is only partially included and the neutrino flows are treated as a freely changeable energy source.For small neutrino luminosities the energy transfer to the matter is insufficient to revive the stalled shock. However, there is a sharp transition to successful explosions, when the neutrino luminosities lie above some ‘threshold value’. Once the shock is driven out and the density and temperature of the matter between neutrino sphere and shock start to decrease during the expansion, suitable conditions for further neutrino energy deposition are maintained, and an explosion results. With the neutrino energy deposition the entropy per nucleon in the region between neutrino sphere and shock grows, and convective overturn will set in. Multi-dimensional simulations show that due to the large pressure scale height a large-scale pattern of up-flows and down-flows with velocities close to the local speed of sound develops. Consequently, cold, postshock material is advected down into the neutrino heating layer close to the neutrino sphere and hot material is transported outwards, thus reducing energy losses by re-emission of neutrinos and increasing the pressure behind the shock. Therefore these convective processes are found to be a very important aid to the delayed supernova explosion. In fact, two-dimensional models explode even in cases where spherically symmetrical computations fail.


1995 ◽  
Vol 50 (7) ◽  
pp. 653-665 ◽  
Author(s):  
Edward H. Poindexter

Research on hydrogenous species in the Si-Si02 system is reviewed and examined. Some aspects of thermal silica on silicon are explained by comparison with crystalline quartz or bulk amorphous fused silica. Hydrogen behavior in the Si-Si02 system is complicated by the unique features of device processing technology, an electrified interface, and high electric fields. An electrochemical model of the negative-bias-field-induced degradation of the system is used as a starting point for discussion of diffusion and solubility, atomic H disposition, thermochemical phenomena, and radiation damage. It is thereby hoped to provide new approaches for complete modeling of hydrogen physical chemistry in the Si-Si02 system.


Author(s):  
Cyril MAUCLAIR ◽  
Konstantin MISHCHIK ◽  
Alexandre MERMILLOD-BLONDIN ◽  
Jörn BONSE ◽  
Arkadi ROSENFELD ◽  
...  

2021 ◽  
Author(s):  
Samuel Newman-Stonebraker ◽  
Sleight Smith ◽  
Julia Borowski ◽  
Ellyn Peters ◽  
Tobias Gensch ◽  
...  

Statistical analysis of reaction data with molecular descriptors can enable chemists to identify reactivity cliffs that result from a mechanistic dependence on a specific structural feature. In this study, we develop a broadly applicable and quantitative classification workflow that identifies reactivity cliffs in eleven Ni- and Pd-catalyzed cross-coupling datasets employing monodentate phosphine ligands. A unique ligand steric descriptor, %<i>V</i><sub>bur</sub> (<i>min</i>), is found to divide these datasets into active and inactive regions at a similar threshold value. Organometallic studies demonstrate that this threshold corresponds to the binary outcome of bisligated versus monoligated metal and that %<i>V</i><sub>bur</sub> (<i>min</i>) is a physically meaningful and predictive representation of ligand structure in catalysis. Taken together, we expect that this strategy will be of broad value in mechanistic investigation of structure-reactivity relationships, while providing a means to rationally partition datasets for data-driven modeling.


1987 ◽  
Vol 101 ◽  
Author(s):  
Zheng Xu ◽  
Kenji Gamo ◽  
Susumu Namba

ABSTRACTCharacteristics of ion beam assisted etching (IBAE) for SiO2 have been investigated to reveal'a possibility for maskless etching using focused ion beams. The ion beam assisted etching was done by bombarding 50 keV unfocused ion beams in XeF2 atmosphere and effect of various etching parameter on etching characteristics have been investigated. These are the effects of XeF2 gas pressure, bombarding ion species, bombarding angle and H2 addition, etc. Significant enhancements up to 100 times larger than physical sputtering were achieved. The selectivity of SiO2 to Si could be tailored to specific requirements from 0.1 to 6 by changing the gas mixing ratio. The etching rate was approximately proportional to the energy deposition rate bombarded by ion beam on surface. Carbon contamination on surface after etching were improved by the introduction of XeF2 gas.


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