Physical Chemistry of Hydrogenous Species in the Si-Si02 System

Research on hydrogenous species in the Si-Si02 system is reviewed and examined. Some aspects of thermal silica on silicon are explained by comparison with crystalline quartz or bulk amorphous fused silica. Hydrogen behavior in the Si-Si02 system is complicated by the unique features of device processing technology, an electrified interface, and high electric fields. An electrochemical model of the negative-bias-field-induced degradation of the system is used as a starting point for discussion of diffusion and solubility, atomic H disposition, thermochemical phenomena, and radiation damage. It is thereby hoped to provide new approaches for complete modeling of hydrogen physical chemistry in the Si-Si02 system.

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Supralinear Current-Voltage-Dependence in Irradiated Fused Silica

Zeitschrift für Naturforschung A ◽

10.1515/zna-1969-0524 ◽

1969 ◽

Vol 24 (5) ◽

pp. 851-852 ◽

Cited By ~ 3

Author(s):

Dietrich Onnasch

Keyword(s):

Electric Fields ◽

Voltage Dependence ◽

Fused Silica ◽

Induced Current ◽

Electron Capture Cross Section ◽

Current Voltage ◽

Field Dependent ◽

Γ Ray ◽

High Electric Fields ◽

Electric Effect

The measured field- and temperature-dependence of γ-ray induced current in synthetic fused silica is explained by a field dependent electron capture cross section. The comparison with a model gives a constant mobility within the region of 8 to 300 °K. With high electric fields the acousto-electric effect is observed.

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Atomic Spectroscopy in the FIM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145157 ◽

1986 ◽

Vol 44 ◽

pp. 758-761

Author(s):

J. J. Hren ◽

S. D. Walck

Keyword(s):

Electron Microscope ◽

Electric Fields ◽

Atom Probe ◽

Atomic Spectroscopy ◽

Single Atom ◽

Statistical Sampling ◽

Commercial Instrument ◽

Available Technology ◽

High Electric Fields ◽

Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

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Comparison of random field strengths in (1-x)SrTiO3-xBiFeO3 and (1-x)SrTiO3-xBaTiO3 relaxor ferroelectrics by means of acoustic emission

The European Physical Journal Applied Physics ◽

10.1051/epjap/2020200075 ◽

2020 ◽

Vol 92 (2) ◽

pp. 20401

Author(s):

Evgeniy Dul'kin ◽

Michael Roth

Keyword(s):

Acoustic Emission ◽

Random Field ◽

Electric Fields ◽

Bias Field ◽

Relaxor Ferroelectrics ◽

External Bias ◽

Field Strengths

In relaxor (1-x)SrTiO3-xBiFeO3 ferroelectrics ceramics (x = 0.2, 0.3 and 0.4) both intermediate temperatures and Burns temperatures were successfully detected and their behavior were investigated in dependence on an external bias field using an acoustic emission. All these temperatures exhibit a non-trivial behavior, i.e. attain the minima at some threshold fields as a bias field enhances. It is established that the threshold fields decrease as x increases in (1-x)SrTiO3-xBiFeO3, as it previously observed in (1-x)SrTiO3-xBaTiO3 (E. Dul'kin, J. Zhai, M. Roth, Phys. Status Solidi B 252, 2079 (2015)). Based on the data of the threshold fields the mechanisms of arising of random electric fields are discussed and their strengths are compared in both these relaxor ferroelectrics.

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Theoretical Transport Studies of Non-equilibrium Carriers Driven by High Electric Fields

10.21236/ada559996 ◽

2012 ◽

Author(s):

Alden Astwood ◽

V. M. Kenkre

Keyword(s):

Electric Fields ◽

Transport Studies ◽

High Electric Fields ◽

Non Equilibrium

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Metal-glass contacts in high electric fields

Electronics Letters ◽

10.1049/el:19690051 ◽

1969 ◽

Vol 5 (4) ◽

pp. 72 ◽

Cited By ~ 1

Author(s):

K.J. McLean

Keyword(s):

Electric Fields ◽

High Electric Fields

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Dielectric Spectroscopy at High Electric Fields

ACS Symposium Series - Broadband Dielectric Spectroscopy: A Modern Analytical Technique ◽

10.1021/bk-2021-1375.ch004 ◽

2021 ◽

pp. 91-104

Author(s):

Ranko Richert

Keyword(s):

Electric Fields ◽

Dielectric Spectroscopy ◽

High Electric Fields

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High Field Electron Drift in a-Si:H

MRS Proceedings ◽

10.1557/proc-297-425 ◽

1993 ◽

Vol 297 ◽

Author(s):

Qing Gu ◽

Eric A. Schiff ◽

Jean Baptiste Chevrier ◽

Bernard Equer

Keyword(s):

Electric Fields ◽

High Field ◽

Drift Mobility ◽

Time Range ◽

Electron Drift ◽

Parameter Change ◽

Transient Photocurrent ◽

Field Mobility ◽

High Electric Fields ◽

Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

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