The Formation of Rugged Surface Polycrystalline Silicon Using Cl2/O2 Plasmas: The Role of Oxygen

1991 ◽  
Vol 236 ◽  
Author(s):  
N. Ozawa ◽  
N. Ikegami ◽  
Y. Miyakawa ◽  
J. Kanamori
Keyword(s):  
Plasma Etching ◽  
Emission Spectroscopy ◽  
Polycrystalline Silicon ◽  
Etch Rate ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Rugged Surface ◽  
Phosphorus Doped ◽  
O2 Plasma

AbstractThe formation of rugged surface polycrystalline silicon (poly-Si) using Cl2/O2 plasmas in which O2 concentration is 0-10 % has been investigated. Phosphorus doped poly-Si (n+ poly-Si) surface is rugged by the plasma etching under the condition that O2 concentration are 1-5 % at 10 Pa, but is not rugged at 1.3 Pa. On the other hand, undoped poly-Si surface is not rugged in Cl2 /0-10 %O2 plasmas at 10 Pa. Oxygen and phosphorus play an important role in the ruggedness of n+ poly-Si. The ruggedness mechanism has been investigated using scanning electron microscope, optical emission spectroscopy and mass spectrometry. The ruggedness mechanism is suggested that in Cl2 plasmas added a small amount of oxygen, n+ poly-Si is etched selectively at the grain boundaries which contain more phosphorus than in grains. The Cl emission intensity and n+ poly-Si etch rate reach maximum in Cl2/3 %O2 plasma at 1.3 Pa. Oxygen has a possibility of promoting SiCIx dissociation and increasing Cl radicals.

A Spectroscopic Study of the Conditions Required for Plasma Etching of Aluminium in BCl3 and Cl2 Plasmas

1987 ◽  
Vol 98 ◽  
Author(s):  
J. A. Cairns ◽  
R. Smailes ◽  
D. C. W. Blaikley ◽  
P. M. Banks ◽  
G. Hancock ◽  
...  
Keyword(s):  
Steady State ◽  
Plasma Etching ◽  
Ground State ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Rf Plasma Discharge ◽  
State Models

ABSTRACTOptical Emission Spectroscopy (OES) with argon actinometry has been used to study the influence of machine parameters on the composition of a BCl3 RF plasma discharge in the absence and presence of aluminium. Two steady state models are proposed to account for the appearance of the various species seen, and to explain their relative abundances in response to changes in power and pressure. The validity of the actinometric technique for measuring relative changes in ground state concentrations is discussed also.

The Effects of the Addition of CF4, Cl2, and N2 TO O2 ECR Plasma on the ETCH Rate, Selectivity and Etched Profile of RuO2 Film

1997 ◽  
Vol 493 ◽  
Author(s):  
Eung-Jik Lee ◽  
Jong-Sam Kim ◽  
Jin-Woong Kim ◽  
Ki-Ho Baik ◽  
Won-Jong Lee
Keyword(s):  
Cyclotron Resonance ◽  
Emission Spectroscopy ◽  
Etch Rate ◽  
Oxygen Radicals ◽  
Optical Emission Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Quadrupole Mass ◽  
Plasma System ◽  
Ecr Plasma

ABSTRACTIn this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECR) plasma on the reactive ion etching (RIE) properties of RuO2 film such as etch rate, selectivity, and etched profile. The concentration of the etching species in the plasma was analyzed with an optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch product was also examined with QMS.The addition of a small amount of CF4, Cl2, or N2 to the O2 plasma increases the concentration of oxygen radicals and accordingly increases the etch rate of the RUO2 films appreciably. The etch rate of the RuO2 film was enhanced more with the addition of a small amount of CF4 and CI2 than with the addition of N2. On the contrary, the etched profile obtained in O2/N2 plasma was superior, without any damaged layer at the sidewall, to O2/CF4 and O2/Cl2 plasma. The selectivity of RuO2 to Si)2 mask was over 20:1 for each of the additive gas proportion at which the etch rate was maximum for each plasma system.

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