A Spectroscopic Study of the Conditions Required for Plasma Etching of Aluminium in BCl3 and Cl2 Plasmas

1987 ◽  
Vol 98 ◽  
Author(s):  
J. A. Cairns ◽  
R. Smailes ◽  
D. C. W. Blaikley ◽  
P. M. Banks ◽  
G. Hancock ◽  
...  
Keyword(s):  
Steady State ◽  
Plasma Etching ◽  
Ground State ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Rf Plasma Discharge ◽  
State Models

ABSTRACTOptical Emission Spectroscopy (OES) with argon actinometry has been used to study the influence of machine parameters on the composition of a BCl3 RF plasma discharge in the absence and presence of aluminium. Two steady state models are proposed to account for the appearance of the various species seen, and to explain their relative abundances in response to changes in power and pressure. The validity of the actinometric technique for measuring relative changes in ground state concentrations is discussed also.

Optical Emission Spectroscopy Measurement of Ar\H2\CH4 RF Plasma for Nano-Crystal Diamond Film Deposition

2014 ◽  
Vol 1035 ◽  
pp. 373-378 ◽  
Author(s):  
Yan Chao Shi ◽  
Qin Jian Zhang ◽  
Jia Jun Li ◽  
Guang Chao Chen
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Diamond Films ◽  
Optical Emission ◽  
Film Deposition ◽  
Rf Plasma ◽  
Gas Mixture ◽  
Technical Application ◽  
Plasma Enhanced Cvd ◽  
Nano Crystal

Ar\H2\CH4 gas mixture was utilized to grow nanocrystal diamond films in a RF plasma enhanced CVD system. CH4\ H2 ratios were changed to study the effect of plasma radicals on the deposit, in which optical emission spectroscopy (OES) was applied to analyze the plasma radicals. It was found that Hα, Hβ, Hγ, CH, C2 were the main radicals in the plasma. Among them, the CH intensity of OES was usually quite strong and increased sharply when the ratio of CH4/H2 was greater than 3%. The intensity of C2 was weak and basically unchanged with the addition of methane. This study can provide a new possible technical application for depositing NCD films.

scholarly journals Modeling and Measurement of Submicron Particles in RF Plasmas in Ar

1995 ◽  
Vol 48 (3) ◽  
pp. 439
Author(s):  
Y Hosokauia ◽  
T Kitajima ◽  
T Makabe
Keyword(s):  
Emission Spectroscopy ◽  
Continuum Model ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Particle Growth ◽  
Mie Scattering ◽  
Submicron Particles ◽  
Rf Plasma ◽  
Plasma System ◽  
Rf Plasmas

The work is focused on the growth and transport of submicron particles in nonreactive radiofrequency plasma in Ar at 13�56 MHz, studied by numerical modeling using the relaxation continuum model, and by experiment using spatiotemporally resolved optical emission spectroscopy with Mie scattering. The particle growth/decay under conditions of the initially injected (CF2)n, and the related spatiotemporal change of the rf plasma structure, are discussed in terms of their numerical and experimental results. The results give suggestions with respect to the influence of particles in a dusty rf plasma system, such as dry etching and sputtering.

LOW PRESSURE CH2Cl2 PLASMA DISCHARGE

2015 ◽  
Vol 8 (3) ◽  
pp. 2240-2248
Author(s):  
Osvaldo Flores
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Langmuir Probe ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Discharge ◽  
X Ray ◽  
Scanning Electron

Glow discharge of dichloromethane (DCM) was investigated employing Optical Emission Spectroscopy (OES), while the electron temperature and electron density were measured using a double Langmuir probe. Deposits formed were characterized by Scanning Electron Microscopy (SEM), X-ray Photo Fluorescence Spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The species identified by OES were the molecular bands of C2, C3, CH, H2, CH+, HCl+, Cl and C+. The material deposited displays a growing behavior. SEM observation shows several features which correspond to coalesce and growth mechanism. The characterization of the material deposited can explain the different stages of deposits that are formed on the electrode surface. Several factors are concerned in the complexity of the process, regarding the interaction of species formed during the plasma discharge. Involving several bonds types such as: C=C, C=C-CH2-Cl, C-C and CH.

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