Characterization of the ZnSe/GaAs Interface Layer by Tem and Spectroscopic Ellipsometry

1992 ◽  
Vol 280 ◽  
Author(s):  
R. Dahmani ◽  
L. Salamanca-Riba ◽  
D. P. Beesabathina ◽  
N. V. Nguyen ◽  
D. Chandler-Horowitz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Spectroscopic Ellipsometry ◽  
Interface Layer ◽  
Transmission Electron ◽  
Three Phase ◽  
Znse Thin Films ◽  
Microscopy Images

ABSTRACTThe interface between ZnSe thin films and GaAs substrates is characterized by High Resolution Transmission Electron Microscopy and room temperature Spectroscopic Ellipsometry. The films were grown on (001) GaAs by Molecular Beam Epitaxy. A three-phase model is used in the reduction of the ellipsometric data, from which the presence of a transition layer of Ga2Se3, with a thickness of less than 1 nm, is confirmed. These results corroborate the high resolution transmission electron microscopy images obtained from the same samples.

scholarly journals Synthesize and Characterization of Hollow Boron-Nitride Nanocages

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Growth Mechanism ◽  
Spherical Shape ◽  
Amorphous Boron ◽  
Transmission Electron ◽  
Ammonia Atmosphere

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.

scholarly journals Characterization of Dental Bonded Interface Degradation Using Focused Ion Beam and High-Resolution Transmission Electron Microscopy

2009 ◽  
Vol 15 (S2) ◽  
pp. 368-369 ◽  
Author(s):  
S Duarte ◽  
A Avishai ◽  
A Sadan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Bonded Interface ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

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