Intense Visible Luminescence from Thermally-Oxidized Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
S. Miyazakj ◽  
K. Shiba ◽  
K. Sakamoto ◽  
M. Hirose
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Excitation Power ◽  
Thermally Grown Oxide ◽  
Localized States ◽  
Porous Si ◽  
Time Resolved ◽  
Visible Luminescence ◽  
Oxidized Porous Silicon ◽  
The Ideal

ABSTRACTPhotoluminescence from porous silicon oxidized at 800 or 900°C in an N2 +O2 gas mixture has been investigated. The ideal passivation of the porous Si surface with thermally grown oxide results in stable, intense visible-light emission. The steady-state and time-resolved luminescence measured as functions of temperature and excitation power have indicated that a possible pathway for the light emission is the radiative recombination through localized states.

Strongly Superlinear Light Emission and Large Induced Absorption in Oxidized Porous Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Koyama ◽  
P. M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Thermal Effects ◽  
Light Emission ◽  
Laser Intensity ◽  
Excitation Intensity ◽  
Silicon Films ◽  
Free Standing ◽  
Induced Absorption ◽  
Cw Laser ◽  
Oxidized Porous Silicon

AbstractThe optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.

Bright visible light emission from electro-oxidized porous silicon

1993 ◽  
pp. 593-602
Author(s):  
J.C. Vial ◽  
S. Billat ◽  
A. Bsiesy ◽  
G. Fishman ◽  
F. Gaspard ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Optical Properties of Microcrystalline Silicon in Oxide Matrix through Partial Oxidation of Anodized Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Osamu Arakaki ◽  
Akio Hiraki
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Partial Oxidation ◽  
Silicon Oxide ◽  
Light Emission ◽  
Wavelength Region ◽  
Microcrystalline Silicon ◽  
Quantum Size ◽  
Visible Luminescence ◽  
Oxide Matrix

ABSTRACTMicrocrystalline silicon embedded in silicon oxide has been prepared by means of partial oxidation of porous silicon produced anodically from degenerate p-Si wafers. Their optical properties such as absorption coefficients and luminescence have been characterized. Results show blue shifts in absorption and photoluminescence spectra in a visible wavelength region with decreasing size of the microcrystalline Si in the Si oxide matrix. The quantum size effect is discussed as well as possible origins of the observed visible luminescence, including light emission from as-anodized (or H-chemisorbed) porous silicon.

Fast Photoluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
V. Petrova-Koch ◽  
T. Muschik ◽  
D. I. Kovalev ◽  
F. Koch ◽  
V. Lehmann
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Spectral Range ◽  
Luminescence Band ◽  
Room Temperature ◽  
Internal Surface ◽  
Porous Si ◽  
Time Resolved ◽  
Processed Material ◽  
Defect Luminescence

ABSTRACTTime-resolved studies of the visible photoluminescence in porous silicon with three different coverages of the internal surface are reported. We use aged, naturally oxidized porous Si (oxihydride), rapid thermal processed material (oxide) and samples stored in HF (pure hydride). A new, fast luminescence band in the blue-green spectral range and with response time less than 100 ns is observed at room temperature in each of the samples, although with different intensities. The observations prove that this is not an oxide-defect luminescence. We speculate on mechanisms for the origin of the fast luminescence in nanometer-size crystallites of Si.

Bright visible light emission from electro-oxidized porous silicon

1993 ◽  
Vol 185 (1-4) ◽  
pp. 593-602 ◽  
Author(s):  
J.C. Vial ◽  
S. Billat ◽  
A. Bsiesy ◽  
G. Fishman ◽  
F. Gaspard ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Mechanisms of visible-light emission from electro-oxidized porous silicon

1992 ◽  
Vol 45 (24) ◽  
pp. 14171-14176 ◽  
Author(s):  
J. C. Vial ◽  
A. Bsiesy ◽  
F. Gaspard ◽  
R. Hérino ◽  
M. Ligeon ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Visible Photoluminescence From Rapid-Thermal-Oxidized Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Y. Kanemitsu ◽  
T. Matsumoto ◽  
T. Futagi ◽  
H. Mimura
Keyword(s):  
Electronic Structure ◽  
Porous Silicon ◽  
Electrochemical Etching ◽  
Electronic Structure Calculations ◽  
Porous Si ◽  
Silicon Oxides ◽  
Visible Photoluminescence ◽  
Oxidized Porous Silicon ◽  
Structure Calculations ◽  
Silicon Oxygen

AbstractWe have studied the origin of the visible photoluminescence (PL) from oxidized porous Si. The hydrogen–passivated surface of porous Si prepared by electrochemical etching is converted to stable silicon oxides by rapid–thermal–oxidization processes. At low oxidation temperature (Tox), the PL spectrum with a peak near 700 nm is observed. At high Tox above 800 °C, a strong blue PL is observed near 400 nm. We discuss the origin of blue and red PL by employing the results of ab initio electronic structure calculations of silicon–oxygen compounds.

Visible light emission from electro-oxidized porous silicon

1992 ◽  
Vol T45 ◽  
pp. 300-304 ◽  
Author(s):  
R Herino ◽  
S Billat ◽  
A Bsiesy ◽  
F Gaspard ◽  
M Ligeon ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Oxidized Porous Silicon ◽  
Visible Light Emission

Visible Luminescence from Porous Silicon and Siloxene: Recent Results

1992 ◽  
Vol 283 ◽  
Author(s):  
H. D. Fuchs ◽  
M. Rosenbauer ◽  
M. S. Brandt ◽  
S. Ernst ◽  
S. Finkbeiner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Time Dependent ◽  
Photoluminescence Excitation ◽  
Porous Si ◽  
Green Luminescence ◽  
Visible Luminescence ◽  
Optically Detected ◽  
Insight Into

ABSTRACTThe optical properties of porous Si (p-Si) are compared to those of siloxene and its derivatives in order to gain more insight into the mechanism of the luminescence observed in p-Si. We report new results of photoluminescence (PL), photoluminescence excitation (PLE), time-dependent and pressure-dependent photoluminescence, and optically detected magnetic resonance (ODMR). Important information about the structural, electronic, and microscopic nature of the two classes of materials are deduced from these experiments. Annealed siloxene and p-Si show very similar properties, suggesting that siloxene-related structures, e.g. electrically isolated Si6-rings, might be responsible for the luminescence in p-Si. The Si-planes in as-prepared siloxene, with their green luminescence, are metastable and are readily oxidized into red-luminescent siloxene configurations.

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