Optical Properties of Microcrystalline Silicon in Oxide Matrix through Partial Oxidation of Anodized Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Osamu Arakaki ◽  
Akio Hiraki
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Partial Oxidation ◽  
Silicon Oxide ◽  
Light Emission ◽  
Wavelength Region ◽  
Microcrystalline Silicon ◽  
Quantum Size ◽  
Visible Luminescence ◽  
Oxide Matrix

ABSTRACTMicrocrystalline silicon embedded in silicon oxide has been prepared by means of partial oxidation of porous silicon produced anodically from degenerate p-Si wafers. Their optical properties such as absorption coefficients and luminescence have been characterized. Results show blue shifts in absorption and photoluminescence spectra in a visible wavelength region with decreasing size of the microcrystalline Si in the Si oxide matrix. The quantum size effect is discussed as well as possible origins of the observed visible luminescence, including light emission from as-anodized (or H-chemisorbed) porous silicon.

Surface and optical properties of porous silicon

1996 ◽  
Vol 11 (2) ◽  
pp. 305-320 ◽  
Author(s):  
S. M. Prokes
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Semiconductor Industry ◽  
Radiative Transition ◽  
Emission Process ◽  
Carrier Recombination ◽  
Quantum Size ◽  
Visible Luminescence ◽  
Weak Light ◽  
Silicon Based

Although silicon is the material of choice in the semiconductor industry, it has one serious disadvantage: it is an extremely poor optoelectronic material. This is because it is an indirect gap semiconductor, in which radiative transition results in extremely weak light emission in the infrared part of the spectrum. Thus, the discovery of strong visible luminescence from a silicon-based material (porous silicon) has been quite surprising and has generated significant interest, both scientific and technological. This material differs from bulk silicon in one important way, in that it consists of interconnected silicon nanostructures with very large surface to volume ratios. Although the first mechanism proposed to explain this emission process involved carrier recombination within quantum size silicon particles, more recent work has shown that the surface chemistry appears to be the controlling factor in this light emission process. Thus, the aim of this work is to outline the data and arguments that have been presented to support the quantum confinement model, along with the shortcomings of such a model, and to examine more recent models in which the chemical and structural properties of the surface regions of the nanostructures have been incorporated.

Light Emission from Microcrystalline Si Confined in SiO2Matrix through Partial Oxidation of Anodized Porous Silicon

1992 ◽  
Vol 31 (Part 2, No.1A/B) ◽  
pp. L1-L3 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Akio Hiraki
Keyword(s):  
Porous Silicon ◽  
Partial Oxidation ◽  
Light Emission

Visible light emission from apnjunction of porous silicon and microcrystalline silicon carbide

1993 ◽  
Vol 63 (9) ◽  
pp. 1209-1210 ◽  
Author(s):  
Toshiro Futagi ◽  
Takahiro Matsumoto ◽  
Masakazu Katsuno ◽  
Yasumitsu Ohta ◽  
Hidenori Mimura ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Visible Light ◽  
Light Emission ◽  
Microcrystalline Silicon ◽  
Visible Light Emission

Mechanisms of light emission from terbium ions (Tb3+) embedded in a Si rich silicon oxide matrix

2012 ◽  
Vol 34 (11) ◽  
pp. 1935-1939 ◽  
Author(s):  
Buket Kaleli ◽  
Mustafa Kulakci ◽  
Rasit Turan
Keyword(s):  
Silicon Oxide ◽  
Light Emission ◽  
Oxide Matrix

Light‐emission phenomena from porous silicon: Siloxene compounds and quantum size effect

1994 ◽  
Vol 75 (12) ◽  
pp. 8060-8065 ◽  
Author(s):  
H.‐J. Lee ◽  
Y. H. Seo ◽  
D.‐H. Oh ◽  
K. S. Nahm ◽  
Y. B. Hahn ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Size Effect ◽  
Light Emission ◽  
Quantum Size Effect ◽  
Quantum Size

STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF TiO2THIN FILM DEPOSITED ON THE NANO POROUS SILICON TEMPLATE

2017 ◽  
Vol 24 (Supp02) ◽  
pp. 1850017
Author(s):  
MAHMOOD BAHAR ◽  
ENSIEH KHALILI DERMANI
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Porous Silicon ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Green Light ◽  
Blue Emission ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Green Light Emission

The porous silicon (PSi), which is produced by the electrochemical etching, has been used as a substrate for the growth of the titanium oxide (TiO2) thin films. By using the EBPVD method, TiO2thin films have been deposited on the surface of the PSi substrate. TiO2/PSi layers were annealed at the temperature of 400[Formula: see text]C, 500[Formula: see text]C and 600[Formula: see text]C for different tests. The morphology and structures of layers were investigated by the scanning electron microscopy (SEM) and X-ray diffraction (XRD). The current–voltage characteristic curves of samples and the ideality factor of heterojunction were studied. The results showed that the electrical properties of the samples change with increase in the annealing temperature. The optical properties of the prepared samples were investigated by using UV–Vis and photoluminescence (PL) spectroscopy. Green light emission of the PSi combined with the blue light and violet–blue emission obtained from the TiO2/PSi PL spectra. The results showed that the optical band gap energy of the PSi has increased from 1.86[Formula: see text]eV to 2.93[Formula: see text]eV due to the deposition of TiO2thin film.

Employing μc-SiOX:H as n-Type Layer and Back TCO Replacement for High-Efficiency a-Si:H/μc-Si:H Tandem Solar Cells

2013 ◽  
Vol 1536 ◽  
pp. 33-38
Author(s):  
S.W. Liang ◽  
C.H. Hsu ◽  
Y.W. Tseng ◽  
Y.P. Lin ◽  
C.C. Tsai
Keyword(s):  
High Efficiency ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Wavelength Region ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Long Wavelength ◽  
Type Layer

ABSTRACTThe n-type hydrogenated microcrystalline silicon oxide (μc-SiOX:H(n)) films with different stoichiometry have been successfully prepared by varying the CO2-to-SiH4 flow ratio in the PECVD system. By using the μc-SiOX:H(n) as a replacement for μc-Si:H(n) and ITO, the conversion efficiency of μc-Si:H single-junction and a-Si:H/μc-Si:H tandem cells were improved to 6.35% and 10.15%, respectively. The major improvement of the short circuit current density (JSC) and these cell efficiencies were originated from the increased optical absorption, which was confirmed by the quantum efficiency measurement showing increased response in the long-wavelength region. Moreover, the all PECVD process except the metal contact simplified the fabrication and might benefit the industrial production.

Visible Luminescence from Porous Silicon and Siloxene: Recent Results

1992 ◽  
Vol 283 ◽  
Author(s):  
H. D. Fuchs ◽  
M. Rosenbauer ◽  
M. S. Brandt ◽  
S. Ernst ◽  
S. Finkbeiner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Time Dependent ◽  
Photoluminescence Excitation ◽  
Porous Si ◽  
Green Luminescence ◽  
Visible Luminescence ◽  
Optically Detected ◽  
Insight Into

ABSTRACTThe optical properties of porous Si (p-Si) are compared to those of siloxene and its derivatives in order to gain more insight into the mechanism of the luminescence observed in p-Si. We report new results of photoluminescence (PL), photoluminescence excitation (PLE), time-dependent and pressure-dependent photoluminescence, and optically detected magnetic resonance (ODMR). Important information about the structural, electronic, and microscopic nature of the two classes of materials are deduced from these experiments. Annealed siloxene and p-Si show very similar properties, suggesting that siloxene-related structures, e.g. electrically isolated Si6-rings, might be responsible for the luminescence in p-Si. The Si-planes in as-prepared siloxene, with their green luminescence, are metastable and are readily oxidized into red-luminescent siloxene configurations.

Microstructural Characterization of Photoluminescent Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
J. M. Macaulay ◽  
F. M. Ross ◽  
P. C. Searson ◽  
S. K. Sputz ◽  
R. People ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Porous Silicon ◽  
Microstructural Characterization ◽  
Photoluminescence Spectroscopy ◽  
Experimental Results ◽  
Visible Luminescence ◽  
Wide Range ◽  
The Impact

ABSTRACTWe have used electron microscopy to examine the microstructure of porous silicon films over a wide range of doping levels, and photoluminescence spectroscopy to study their optical properties. We discuss the impact of our experimental results on models from the literature which were proposed to explain visible luminescence from porous silicon.

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