Simulation of Tensile Deformation of Small Copper Single Crystals

1992 ◽  
Vol 291 ◽  
Author(s):  
Masao Doyama

ABSTRACTThe molecular dynamics method was used to simulate the plastic deformation of small copper single crystals. Dislocations were created near the tips of cracks. A very sharp yield stress was found.

1993 ◽  
Vol 319 ◽  
Author(s):  
M. Aoshima ◽  
T. Kusube ◽  
J. Ida ◽  
Masao Doyama

AbstractSmall single crystals of titanium with and without stacking faults have been pulled by use of the molecular dynamics method. The tensile axis was [0001] and the stacking fault was introduced on (0001) pianes. The yield stress was higher in the crystal with stacking faults. The deformation was complicated in the crystal with stacking fault. Dislocations were created near the tip of a crack and moved on (1122).


2020 ◽  
Vol 10 (06) ◽  
pp. 125-150
Author(s):  
Dung Nguyen Trong ◽  
Tuan Tran Quoc ◽  
Hue Dang Thi Minh ◽  
Cuong Nguyen Chinh ◽  
Van Duong Quoc

1994 ◽  
Vol 367 ◽  
Author(s):  
H. Tsukahara ◽  
Y. Niwa ◽  
T. Takayama ◽  
Masao Doyama

AbstractA small single crystal of copper with a notch has been bent by use of the molecular dynamics method. The bend axis was [110]. Dislocations were created near the tip of the notch and moved on (111) slip plane. Pulling a copper single crystal, half dislocations were created in such a way that the bending was compensated.


2002 ◽  
Vol 16 (28n29) ◽  
pp. 4431-4435
Author(s):  
MASAO DOYAMA ◽  
Y. KOGURE ◽  
T. NOZAKI ◽  
Y. KATO

Simulations were performed to model the response of a copper rectangular parallelepiped single crystal with a notch to tensile deformation. Partial dislocations were created near the tip of the notch as we expected. It is hard to see where the dislocations were created by just looking at the displaced positions of atoms, but the creation of dislocations was easily observed by a simulation of X-ray Lang method. Before creation of dislocations, some indication was quite clearly shown. Laue patterns during tensile deformation were also simulated.


2000 ◽  
Vol 20 (1Supplement) ◽  
pp. 43-46
Author(s):  
Ken-ichi SAITOH ◽  
Takashi DOI ◽  
Masao KOMAYA ◽  
Takehiko INABA

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