Performance Characteristics of N-Type SI-SI/GE Quantum well Infrared Photodetectors

1994 ◽  
Vol 299 ◽  
Author(s):  
V. D. Shadrin ◽  
V. T. Coon ◽  
F. L. Serzhenko
Keyword(s):  
Quantum Well ◽  
Exchange Interaction ◽  
Dark Current ◽  
Multiple Quantum Well ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Ir Detectors ◽  
Quantum Well Infrared Photodetectors ◽  
Well Detector ◽  
Electron Exchange Interaction

AbstractThe theory of multiple quantum well n-type Si-SiGe IR detectors is presented. The coefficient of photoabsorption, quantum efficiency and responsivity of Si-SiGe quantum well detector are calculated taking in consideration the effects of depolarization and electron-electron exchange interaction. We show that the Si-SiGe quantum well detectors possess lower dark current and better performance characteristics compared to GaAs-AlGaAs photodetectors.

scholarly journals Performance characteristics of cw InGaN multiple-quantum-well laser diodes

2000 ◽  
Vol 639 ◽  
Author(s):  
Michael Kneissl ◽  
William S. Wong ◽  
Chris. G. Van de Walle ◽  
John E. Northrup ◽  
David W. Treat ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

ABSTRACTThe performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions laser oscillation was observed up to 90°C. A significant reduction in thermal resistance was observed for laser diodes transferred from sapphire onto Cu substrates by excimer laser lift-off, resulting in increased cw output power of more than 100mW.

Analysis of the dark current in doped‐well multiple quantum well AlGaAs infrared photodetectors

1989 ◽  
Vol 66 (11) ◽  
pp. 5656-5658 ◽  
Author(s):  
E. Pelvé ◽  
F. Beltram ◽  
C. G. Bethea ◽  
B. F. Levine ◽  
V. O. Shen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Multiple Quantum Well ◽  
Infrared Photodetectors ◽  
Multiple Quantum

Advances in multiple-quantum-well IR detectors

1991 ◽  
Author(s):  
Walter L. Bloss ◽  
Michael J. O'Loughlin ◽  
Mary Rosenbluth
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Ir Detectors
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