Chemically Assisted ion-Beam Etching of Sol-Gel Derived Pzt, Plzt And LITaO3 Thin Films for Silicon Based Device Integration

AbstractWet chemical, reactive ion etching and reactive ion-beam etching of sol-gel prepared PZT (54/46) [Pb(Zr,Ti)O3], Lanthanum doped PZT [PLZT (9/65/35)] and LiTaO3 have been investigated. Wet chemical etching using an HCI-HF solution, reactive-ion etching using a SF6 plasma and chemically assisted ion-beam etching (CAIBE) using a xenon plasma and chlorine reactive gas were used. Etch rates for each method were determined and the ability to define small features in the thin film ferroelectric was investigated. It was found that for structures smaller than approximately 20 × 20 μm2, chemically assisted ion beam etching provided by far the best results. 3 × 3 μm2 capacitor and 2 μm wide optical waveguide structures in PZT, PLZT respectively, were successfully fabricated using a CAIBE system. An etch depth monitor enabled accurate in-situ etch rate monitoring of the PLZT and PZT thin films.

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Fabrication of Sol-Gel Derived Ferroelectric Plzt (9/65/35) Optical Waveguides

MRS Proceedings ◽

10.1557/proc-243-275 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 4

Author(s):

P.F. Baude ◽

C. Ye ◽

T. Tamagawa ◽

D.L. Polla

Keyword(s):

Thin Films ◽

Optical Waveguides ◽

Ion Beam ◽

Sol Gel ◽

Optical Quality ◽

Silicon Substrates ◽

Deposition Technique ◽

Ion Beam Etching ◽

Wet Chemical ◽

Film Cracking

AbstractCrack free transparent ferroelectric PLZT (9/65/35) thin films were deposited on silicon substrates using the sol-gel deposition technique. An intermediate layer of PLT was used to improve the PLZT's optical quality and to reduce the amount of film cracking. Wet chemical, plasma and reactive ion etching are investigated as means of realizing the necessary waveguide structures. Waveguiding is observed in 2-4mm long PLZT (9/65/35) fabricated by reactive ion beam etching.

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Implementation of smooth nanocrystalline diamond microstructures by combining reactive ion etching and ion beam etching

Diamond and Related Materials ◽

10.1016/j.diamond.2017.09.014 ◽

2017 ◽

Vol 79 ◽

pp. 164-172 ◽

Cited By ~ 7

Author(s):

Jana Schmitt ◽

Wim Nelissen ◽

Ulrike Wallrabe ◽

Friedemann Völklein

Keyword(s):

Ion Beam ◽

Reactive Ion Etching ◽

Nanocrystalline Diamond ◽

Ion Etching ◽

Ion Beam Etching

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Reactive ion etching (CF4/Ar) and ion beam etching of various glasses for diffractive optical element fabrication

International Journal of Applied Glass Science ◽

10.1111/ijag.12412 ◽

2018 ◽

Vol 9 (4) ◽

pp. 499-509 ◽

Cited By ~ 2

Author(s):

Jana Schmitt ◽

Andreas Meier ◽

Ulrike Wallrabe ◽

Friedemann Völklein

Keyword(s):

Ion Beam ◽

Reactive Ion Etching ◽

Optical Element ◽

Diffractive Optical Element ◽

Ion Etching ◽

Ion Beam Etching

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Ion-Beam Milling Materials with Applications to TEM Specimen Preparation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100163794 ◽

1996 ◽

Vol 54 ◽

pp. 266-267

Author(s):

Ron Anderson

Keyword(s):

Glow Discharge ◽

Ion Beam ◽

Reactive Ion Etching ◽

Dry Etching ◽

Surface Cleaning ◽

Specimen Preparation ◽

Ion Milling ◽

Physical Sciences ◽

Ion Etching ◽

Ion Beam Etching

For the last thirty years, ion milling has been an indispensable part of preparing TEM specimens in the physical sciences. While great improvements have been made in our ability to thin most materials to the point where ion milling may not be a requirement, there will still be a need to utilize ion milling to clean and polish specimens and to provide small amounts of incremental thinning as needed. Thanks mainly to the work of Bama we now understand a great deal about the physics of ion milling. We also benefit from the works of a number of investigators who have studied the artifacts produced by ion milling (see Barber for a review).Ion milling is a subset of the topic “dry etching,” which consists of two major categories: glow discharge methods and ion beam methods. Glow discharge methods include plasma etching, reactive ion etching, and glow discharge sputter etching. These techniques have little application in TEM specimen preparation aside from surface cleaning. The reactive ion etching literature is a source for suggesting gas/specimen combinations to perform chemically-assisted ion beam etching (CAIBE), to be discussed below. The other major dry etching category, ion beam methods, includes ion milling, reactive ion beam etching, and CAIBE.

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Automated Sample Preparation of Low-k Dielectrics for FESEM

ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2005p0231 ◽

2005 ◽

Author(s):

R. R. Cerchiara ◽

H. A. Cook ◽

P. E. Fischione ◽

J. J. Gronsky ◽

J. M. Matesa ◽

...

Keyword(s):

Sample Preparation ◽

Ion Beam ◽

Reactive Ion Etching ◽

Copper Interconnects ◽

Plasma Cleaning ◽

Ion Etching ◽

Ion Beam Etching ◽

Automated Sample Preparation ◽

Microelectronic Materials ◽

Low K

Abstract The SiLK resins, composed of aromatic hydrocarbons, are a family of highly cross-linked thermoset polymers with isotropic dielectric properties. Patterning of SiLK for high aspect ratio copper interconnects has depended on reactive ion etching with oxygen/nitrogen gas mixtures. Reactive ion etching is therefore also accomplished with reducing plasmas such as nitrogen/hydrogen. An additional plasma cleaning step can be inserted after the reactive ion etching (RIE) step, so that any residual contamination is removed prior to imaging or final sputter coating. Automated sample preparation of microelectronic materials containing high and low-k dielectrics for FESEM is accomplished in this article by combining these techniques: plasma cleaning, ion beam etching, and reactive ion etching. A single RIE chemistry was effective in etching both dielectrics as well as delineating the other phases present.

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Mechanism of Dry Etching of Silicon Dioxide: a Case of Direct Reactive Ion Etching

MRS Proceedings ◽

10.1557/proc-38-157 ◽

1984 ◽

Vol 38 ◽

Cited By ~ 2

Author(s):

Ch. Steinbruchel ◽

H. W. Lehmann ◽

K. Frick

Keyword(s):

Ion Beam ◽

Reactive Ion Etching ◽

Plasma Chemistry ◽

Experimental Conditions ◽

Ion Etching ◽

Ion Density ◽

Ion Beam Etching ◽

Plasma Species ◽

Parallel Plate Reactor ◽

Sputter Etching

AbstractReactive sputter etching of SiO2 with CHF3-O2 plasmas has been investigated in a parallel plate reactor by combining etch rate measurements with concurrent determination of ion densities (using a Langmuir probe) and the composition of neutral plasma species (using a mass spectrometer). Etch rates are found to follow the ion density and to be fairly independent of the plasma chemistry under most experimental conditions. Moreover, a comparison of reactive sputter etching and reactive ion beam etching of SiO2 with CHF3 and CF4 shows that etch yields per incoming ion are essentially independent of the flux of neutral radicals to the substrate. This strongly suggests as the dominant etch mechanism for SiO2 direct reactive ion etching, where ions themselves are the main reactants in the etch reaction. Measured values of etch yields are consistent with this picture.

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