Automated Sample Preparation of Low-k Dielectrics for FESEM

Abstract The SiLK resins, composed of aromatic hydrocarbons, are a family of highly cross-linked thermoset polymers with isotropic dielectric properties. Patterning of SiLK for high aspect ratio copper interconnects has depended on reactive ion etching with oxygen/nitrogen gas mixtures. Reactive ion etching is therefore also accomplished with reducing plasmas such as nitrogen/hydrogen. An additional plasma cleaning step can be inserted after the reactive ion etching (RIE) step, so that any residual contamination is removed prior to imaging or final sputter coating. Automated sample preparation of microelectronic materials containing high and low-k dielectrics for FESEM is accomplished in this article by combining these techniques: plasma cleaning, ion beam etching, and reactive ion etching. A single RIE chemistry was effective in etching both dielectrics as well as delineating the other phases present.

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Recent Developments in Automated Sample Preparation for FESEM

ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2003p0288 ◽

2003 ◽

Author(s):

R. R. Cerchiara ◽

P. E. Fischione ◽

J. J. Gronksy ◽

W. F. Hein ◽

D. D. Martin ◽

...

Keyword(s):

Sample Preparation ◽

Ion Beam ◽

Semiconductor Industry ◽

Physical Damage ◽

Ion Beam Etching ◽

Orientation Mapping ◽

Recent Developments ◽

Automated Sample Preparation ◽

Microelectronic Materials ◽

Analytical Practice

Abstract Standard analytical practice in the semiconductor industry depends on fast, efficient and reliable sample preparation prior to FESEM. “In lens” imaging technology and orientation mapping (EBSD) demand sample surfaces free of physical damage and residual contamination. An integrated preparation tool has been developed that incorporates the functionality necessary for argon – oxygen plasma cleaning, ion beam etching (IBE), reactive ion beam etching (RIBE), reactive ion etching (RIE), and ion beam sputter coating (IBSC). Control, monitoring and sequential automation of the processes is accomplished through a novel combination of software and hardware. FESEM results for Al and Cu based microelectronic materials will be discussed, as well as EBSD results for bulk metals. Improvements in throughput and subsequent materials characterization will be demonstrated.

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Automated Sample Preparation of Packaged Microelectronics for FESEM

ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2008p0280 ◽

2008 ◽

Author(s):

R. R. Cerchiara ◽

P. E. Fischione ◽

M. F. Boccabella ◽

A. C. Robins

Keyword(s):

Sample Preparation ◽

Ion Beam ◽

Gate Oxides ◽

Ion Beam Etching ◽

Selective Etch ◽

Transmission Electron ◽

Metal Levels ◽

Automated Sample Preparation ◽

Microelectronic Materials ◽

Future Work

Abstract A packaged device based on a ball grid array or other design presents a challenge to the failure analyst. Accessing one of the metal levels from the topside requires decapsulation by either a wet, predominantly dry (RIE) or a completely dry (mechanical) treatment. To reveal the details of the gate including the gate oxide, new approaches to selective etch delineation by RIE are required. This article presents an automated sample preparation method for packaged microelectronic materials by combining plasma cleaning, ion beam etching, reactive ion etching and ion beam sputter coating. A single etch gas chemistry was effective in phase delineation by RIE. Future work to further delineate the gate oxides could support accurate metrology by means of FESEM rather than field emission transmission electron microscope.

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Implementation of smooth nanocrystalline diamond microstructures by combining reactive ion etching and ion beam etching

Diamond and Related Materials ◽

10.1016/j.diamond.2017.09.014 ◽

2017 ◽

Vol 79 ◽

pp. 164-172 ◽

Cited By ~ 7

Author(s):

Jana Schmitt ◽

Wim Nelissen ◽

Ulrike Wallrabe ◽

Friedemann Völklein

Keyword(s):

Ion Beam ◽

Reactive Ion Etching ◽

Nanocrystalline Diamond ◽

Ion Etching ◽

Ion Beam Etching

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Reactive ion etching (CF4/Ar) and ion beam etching of various glasses for diffractive optical element fabrication

International Journal of Applied Glass Science ◽

10.1111/ijag.12412 ◽

2018 ◽

Vol 9 (4) ◽

pp. 499-509 ◽

Cited By ~ 2

Author(s):

Jana Schmitt ◽

Andreas Meier ◽

Ulrike Wallrabe ◽

Friedemann Völklein

Keyword(s):

Ion Beam ◽

Reactive Ion Etching ◽

Optical Element ◽

Diffractive Optical Element ◽

Ion Etching ◽

Ion Beam Etching

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Ion-Beam Milling Materials with Applications to TEM Specimen Preparation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100163794 ◽

1996 ◽

Vol 54 ◽

pp. 266-267

Author(s):

Ron Anderson

Keyword(s):

Glow Discharge ◽

Ion Beam ◽

Reactive Ion Etching ◽

Dry Etching ◽

Surface Cleaning ◽

Specimen Preparation ◽

Ion Milling ◽

Physical Sciences ◽

Ion Etching ◽

Ion Beam Etching

For the last thirty years, ion milling has been an indispensable part of preparing TEM specimens in the physical sciences. While great improvements have been made in our ability to thin most materials to the point where ion milling may not be a requirement, there will still be a need to utilize ion milling to clean and polish specimens and to provide small amounts of incremental thinning as needed. Thanks mainly to the work of Bama we now understand a great deal about the physics of ion milling. We also benefit from the works of a number of investigators who have studied the artifacts produced by ion milling (see Barber for a review).Ion milling is a subset of the topic “dry etching,” which consists of two major categories: glow discharge methods and ion beam methods. Glow discharge methods include plasma etching, reactive ion etching, and glow discharge sputter etching. These techniques have little application in TEM specimen preparation aside from surface cleaning. The reactive ion etching literature is a source for suggesting gas/specimen combinations to perform chemically-assisted ion beam etching (CAIBE), to be discussed below. The other major dry etching category, ion beam methods, includes ion milling, reactive ion beam etching, and CAIBE.

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Mechanism of Dry Etching of Silicon Dioxide: a Case of Direct Reactive Ion Etching

MRS Proceedings ◽

10.1557/proc-38-157 ◽

1984 ◽

Vol 38 ◽

Cited By ~ 2

Author(s):

Ch. Steinbruchel ◽

H. W. Lehmann ◽

K. Frick

Keyword(s):

Ion Beam ◽

Reactive Ion Etching ◽

Plasma Chemistry ◽

Experimental Conditions ◽

Ion Etching ◽

Ion Density ◽

Ion Beam Etching ◽

Plasma Species ◽

Parallel Plate Reactor ◽

Sputter Etching

AbstractReactive sputter etching of SiO2 with CHF3-O2 plasmas has been investigated in a parallel plate reactor by combining etch rate measurements with concurrent determination of ion densities (using a Langmuir probe) and the composition of neutral plasma species (using a mass spectrometer). Etch rates are found to follow the ion density and to be fairly independent of the plasma chemistry under most experimental conditions. Moreover, a comparison of reactive sputter etching and reactive ion beam etching of SiO2 with CHF3 and CF4 shows that etch yields per incoming ion are essentially independent of the flux of neutral radicals to the substrate. This strongly suggests as the dominant etch mechanism for SiO2 direct reactive ion etching, where ions themselves are the main reactants in the etch reaction. Measured values of etch yields are consistent with this picture.

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