Nondestructive Study of Metal-Silicon Interfaces Using Soft X-Ray Emission Spectroscopy

ABSTRACTSi L2,3 valence band soft x-ray emission spectrum (SXES) due to an e ectron excitation for silicides shows a clear modification from that for Si single crystal. Using this fact in combination with the incident angle variation(IAV) device, a non-destructive in-depth analysis of a Au(thin film)-Si(lll) contact is successfully carried out. Also, the SXES method has clarified the fact that a fair amount of the Si-s valence band density of state (yB-DOS) is included in the upper part of the yB-DOS for a Au-Si alloy, or Au-silicide, due to the Au-Si bond formation, which is a clear contrast to proposals given so far.

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Electronic and Structural Study of Ni(Co) Silicide/Si(111) Contact System Studied by Soft X-Ray Emission Spectroscopy

MRS Proceedings ◽

10.1557/proc-159-173 ◽

1989 ◽

Vol 159 ◽

Cited By ~ 1

Author(s):

H. Watabe ◽

H. Nakamura ◽

M. Iwami ◽

M. Hirai ◽

M. Kusaka

Keyword(s):

Structural Analysis ◽

Transition Metal ◽

Emission Spectrum ◽

Valence Band ◽

Structural Study ◽

Emission Spectroscopy ◽

Bond Formation ◽

Density Of State ◽

X Ray ◽

Non Destructive

ABSTRACTAn electron excited Si L2,3 valence band soft x-ray emission spectrum (SXES) for Ni(or Co)Si2 showed a clear modification from that for Si. From the SXES study, a fair amount of the Si(3s) valence band density of state (VB-DOS) is concluded to be included in the upper part of the VB-DOS for the transition metal(TM) disilicides due to the TM-Si bond formation, which is a clear contrast to proposals given so far. Non-destructive structural analysis of a NiSi2 (tens of nm)/Si(111) contact is also carried out successfully using the SXES.

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Nondestructive Depth Profiling Using Soft X-Ray Emission Spectroscopy by Incident Angle Variation Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.395 ◽

1992 ◽

Vol 31 (Part 1, No. 2A) ◽

pp. 395-400 ◽

Cited By ~ 10

Author(s):

Shoichi Yamauchi ◽

Masaaki Hirai ◽

Masahiko Kusaka ◽

Motohiro Iwami ◽

Hatsuo Nakamura ◽

...

Keyword(s):

Emission Spectroscopy ◽

Incident Angle ◽

Depth Profiling ◽

Variation Method ◽

Angle Variation ◽

X Ray

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Study of CuS Thin Films Deposited by PLD Simulated for Prism Based SPR Sensor

Engineering and Technology Journal ◽

10.30684/etj.v39i6.1973 ◽

2021 ◽

Vol 39 (6) ◽

pp. 936-945

Author(s):

Isaac S. Najm ◽

Ali A. Alwahib ◽

Suad M. Kadhim

Keyword(s):

Thin Film ◽

Pulsed Laser Deposition ◽

Surface Plasmon ◽

Quartz Substrate ◽

Pulsed Laser ◽

Morphological Characteristics ◽

Laser Deposition ◽

X Ray ◽

Optical Test ◽

Depth Analysis

Copper Sulfide CuS thin film was prepared using pulsed laser deposition PLD technique and characterized by X-ray and SEM. The optical, structural, and morphological properties are examined at different energies 500 mJ, 600 mJ, 700 mJ, and 800 mJ. The best result was 600 mJ which annealed at various annealing temperatures 300°C, 350°C, 400°C, and 450°C. The effect of thermal annealing on CuS thin film was examined X-ray and SEM. CuS Film was simulated using a prism-based SPR optical sensor. This paper introduces the optical test study of CuS thin film deposited by pulsed laser deposition technique on the quartz substrate and supported by theoretical application study under the effect of surface plasmon resonance (SPR). In this research field, the optical and morphological characteristics of the CuS thin film were deposited by PLD at different laser energies. The annealing process was applied for better-deposited thin-film; the XRD results, SEM images, transmittance T%, and energy gap Eg were analyzed thoroughly and compared to evaluate the thin-film. This effort was made in an in-depth analysis of CuS thin film deposited by PLD on the quartz substrate and applied theoretically in surface plasmon application.

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