Hydrogen Bonding and Microvoid Stability in a-Si:H
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ABSTRACTWe have annealed PECVD a-Si:H films at 250, 300, and 350°C and measured the evolution of the infrared absorption spectrum. We observe that, during the initial stage of such a heat treatment, atomic hydrogen migrates from the isolated state to the clustered state. Thus diffusion of atomic hydrogen must occur around 300°C. Microvoids with internal surfaces covered with SiH bonds appear to be more stable than voids lined with SiH2 bonds and (SiH2)n polymers.
1974 ◽
Vol 28
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pp. 201-204
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2012 ◽
Vol 538-541
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pp. 2194-2198
2011 ◽
Vol 115
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pp. 9184-9194
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1964 ◽
Vol 20
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pp. 179-185
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1986 ◽
Vol 36
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pp. 239-247
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1957 ◽
Vol 1
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pp. 124-132
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