Structural Characterization of GA on Si(112) by Auger Electron Diffraction

1994 ◽  
Vol 355 ◽  
Author(s):  
J. E. Yater ◽  
A. Shih ◽  
Y. U. Idzerda
1996 ◽  
Vol 52 (6) ◽  
pp. 932-938 ◽  
Author(s):  
C. D. Ling ◽  
S. Schmid ◽  
J. G. Thompson ◽  
R. L. Withers ◽  
M. Sterns

Attempts to synthesize Sb-based analogues of the known Bi-based Aurivillius phase, Bi3TiNbO9, have led to the discovery of an isomorphous pair of a new type of layered intergrowth phase of general stoichiometry Sb3+x Nb3−x TiO14 and Sb3+x Ta3−x TiO14. Electron diffraction proved essential for the initial recognition and structural characterization of these phases. The structures of Sb3+x Nb3−x TiO14, x = 0.89, and Sb3+x Ta3−x TiO14, x = 1.26, are reported. The structures are described as ordered intergrowths of β-Sb2O4-type and Sb2O5-type structures, with NbV/TaV substituting for SbV in the former and NbV/TaV/TiIV substituting for SbV in the latter.


2010 ◽  
Vol 50 (3) ◽  
pp. 385-409 ◽  
Author(s):  
Ute Kolb ◽  
Tatiana E. Gorelik ◽  
Enrico Mugnaioli ◽  
Andrew Stewart

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