Stress Evolution Kinetics in Ultra Thin Sputtered Au Films

1994 ◽  
Vol 356 ◽  
Author(s):  
Quanmin Su ◽  
Cecile Bailly ◽  
Manfred Wuttig ◽  
Sean Corcoran ◽  
Karl Sieradzki

AbstractThe stress and microstructure of a thin film evolve in time if the deposition is interrupted or terminated. To establish the parameters which control the kinetics of both processes, ultra thin Au layers were sputter deposited on Si membranes and the stress evolution was monitored by a vibrating membrane technique. The evolution of the surface morphology was studied by scanning tunnelling microscopy. Aging after the termination of each deposition causes stress evolution towards higher tension which, around ambient temperature, follows an exponential law with a characteristic relaxation time of the order of tenths of seconds. This time was found to depend strongly on the accumulated film thickness as well as the surface morphology. The intrinsic stress of the depositing layer increases with the coverage of the film on the substrate. Scanning Tunnelling Microscopy shows that the film grows in a Volmer-Weber mode and that the average stress reaches a sharp maximum as the film become continuous.

1995 ◽  
Vol 405 ◽  
Author(s):  
Quanmin Su ◽  
R. C. Cammarata ◽  
Manfred Wuttig

AbstractThe stress and microstructure of growing thin films evolve with time if the deposition is interrupted or terminated. To establish the parameters which control both kinetic processes ultra thin Au, Cu and Al layers were sputter deposited on Si membranes and the stress evolution was monitored by a vibrating membrane technique. The related surface morphology was studied by scanning tunneling microscopy. Aging after each deposition causes stress evolution towards higher tension and the evolution of the stress with time follows an exponential law with a characteristic relaxation time of the order of tens of seconds. This time was found to depend strongly on the accumulated film thickness as well as the surface morphology. The intrinsic stress of the growing layer increases with the coverage of the film on substrate. Scanning Tunneling Microscopy (STM) shows that the film grows in a Volmer-Weber (VW) mode and the stress reaches a maximum as the film become continuous.


1995 ◽  
Vol 257 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Z. Rakocˇević ◽  
S. Sˇtrbac ◽  
N. Bibić ◽  
D. Perusˇko ◽  
T. Nenadović

1991 ◽  
Vol 237 ◽  
Author(s):  
E. J. Heller ◽  
M. G. Lagally

ABSTRACTThe surface morphology of MBE - grown GaAs(001) has been investigated using scanning tunnelling microscopy (STM) and reflection high - energy electron diffraction (RHEED). STM shows that the missing - dimer - row structure of the (2 × 4)/c(2 × 8) reconstruction consists of rows of clusters of two As dimers separated by rows of two missing dimers, in agreement with previous reports. Layers grown on nominally flat substrates display a multi - level system of terraces elongated along [110] suggesting that growth occurs primarily by sticking at B - type steps. For films grown under certain growth conditions, B - type steps on vicinal substrates exhibit a dendritic step morphology, which may be an example of a step flow growth instability consistent with limited Ga diffusion over steps.


2021 ◽  
Author(s):  
Xiang Wang ◽  
Yu-Qi Wang ◽  
Ya-Chen Feng ◽  
Dong Wang ◽  
Li-Jun Wan

This review summarizes the applications of scanning tunnelling microscopy in electrocatalysis, including the investigation of the electrocatalyst structures and the surface processes related to electrocatalytic reactions.


2012 ◽  
Vol 371 ◽  
pp. 012070 ◽  
Author(s):  
R Zan ◽  
U Bangert ◽  
C Muryn ◽  
P Mattocks ◽  
B Hamilton ◽  
...  

2010 ◽  
Vol 114 (40) ◽  
pp. 17036-17041 ◽  
Author(s):  
David C. Grinter ◽  
Roslinda Ithnin ◽  
Chi L. Pang ◽  
Geoff Thornton

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