Determination of the C70/C60 ratio in fullerene thin film as a function of the sublimation distance and the substrate temperature using scanning tunnelling microscopy

1994 ◽  
Vol 70 (3) ◽  
pp. 721-730 ◽  
Author(s):  
H. P. Lang ◽  
K. M. Heeger ◽  
V. Thommen-geiser ◽  
H.-J. Güntherodt
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Scanning Tunnelling Microscopy ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

Scanning tunnelling microscopy investigations of organic thin film topography

1990 ◽  
Vol 188 (2) ◽  
pp. 329-333 ◽  
Author(s):  
A.M. Troyanovskij ◽  
M. Hietschold ◽  
M.S. Khaikin ◽  
I. Androsch ◽  
W. Vollmann ◽  
...  
Keyword(s):  
Thin Film ◽  
Scanning Tunnelling Microscopy ◽  
Organic Thin Film ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

scholarly journals Studying the dynamic behaviour of porphyrins as prototype functional molecules by scanning tunnelling microscopy close to room temperature

2014 ◽  
Vol 50 (65) ◽  
pp. 9034-9048 ◽  
Author(s):  
H. Marbach ◽  
H.-P. Steinrück
Keyword(s):  
Room Temperature ◽  
Dynamic Behaviour ◽  
Scanning Tunnelling Microscopy ◽  
Thermodynamic Potentials ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy ◽  
Underlying Processes ◽  
Detailed Determination

Scanning tunnelling microscopy of the dynamics of functional molecules (porphyrins) close to room temperature enables a detailed determination of the thermodynamic potentials including entropic contributions of the underlying processes.

Shape Transitions of Self-Assembled Ge Islands on Si(001)

2001 ◽  
Vol 707 ◽  
Author(s):  
Armando Rastelli ◽  
Matthias Kummer ◽  
Hans Von Känel
Keyword(s):  
Substrate Temperature ◽  
Morphological Changes ◽  
Scanning Tunnelling Microscopy ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy ◽  
Magnetron Sputter ◽  
Self Assembled ◽  
Shape Changes ◽  
Stable Shape ◽  
Shape Transitions

ABSTRACTCoherently strained Ge islands were grown at a substrate temperature of 550°C by magnetron sputter epitaxy on Si (001) and studied by scanning tunnelling microscopy (STM). The shape changes induced by exposure to a Si-flux at 450°C were investigated as a function of the Si-coverage. During Si-capping, multifaceted domes were found to flatten and to transform into {105}-faceted pyramids and subsequently into stepped mounds through intermediate shapes. The observed sequence of morphological changes is induced by Si-Ge intermixing and is shown to be the inverse of that occurring during Ge or Si1-xGex growth on Si (001). The results are interpreted with a model in which the stable shape of an island mainly depends on its volume and composition.

Determination of surface topography of biological specimens at high resolution by scanning tunnelling microscopy

Nature ◽  
1985 ◽  
Vol 315 (6016) ◽  
pp. 253-254 ◽  
Author(s):  
A. M. Baró ◽  
R. Miranda ◽  
J. Alamán ◽  
N. García ◽  
G. Binnig ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Topography ◽  
Scanning Tunnelling Microscopy ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

Shape Transitions of Self-Assembled Ge Islands on Si (001)

2001 ◽  
Vol 696 ◽  
Author(s):  
Armando Rastelli ◽  
Matthias Kummer ◽  
Hans von Känel
Keyword(s):  
Substrate Temperature ◽  
Morphological Changes ◽  
Scanning Tunnelling Microscopy ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy ◽  
Magnetron Sputter ◽  
Self Assembled ◽  
Shape Changes ◽  
Stable Shape ◽  
Shape Transitions

AbstractCoherently strained Ge islands were grown at a substrate temperature of 550°C by magnetron sputter epitaxy on Si (001) and studied by scanning tunnelling microscopy (STM). The shape changes induced by exposure to a Si-flux at 450°C were investigated as a function of the Sicoverage. During Si-capping, multifaceted domes were found to flatten and to transform into {105}-faceted pyramids and subsequently into stepped mounds through intermediate shapes. The observed sequence of morphological changes is induced by Si-Ge intermixing and is shown to be the inverse of that occurring during Ge or Si1-xGex growth on Si (001). The results are interpreted with a model in which the stable shape of an island mainly depends on its volume and composition.

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