New Gas Atomizing Technique for Nb3Al Intermetallic Alloy

1994 ◽  
Vol 364 ◽  
Author(s):  
Noriaki Murahashi ◽  
Hiroaki Kohmoto ◽  
Tohru Kohno

AbstractPlasma-Melt-Gas-Atomizing (PMGA) technique has been developed to produce rapidly solidified powders of intermetallic alloys for ultra-high temperature structural applications. Using this technique, rapidly solidified Nb3Al powders have been produced. These powders consist mainly of supersaturated solid solution of Al in Nb (A2), while the conventional cast structure consists of ordered A 15, and may be a good source for most powder metallurgical applications. Furthermore, a unique technique to control the powder size distribution is currently under development. In-situ measurement method of the atomized powder size distribution has been examined by using phase Doppler particle analyzer to control final powder size distribution by the feedback from the in-situ measurement data to the control system of the Plasma-Melt-Gas-Atomizer.

2018 ◽  
Vol 29 (12) ◽  
pp. 124001 ◽  
Author(s):  
Xuecheng Wu ◽  
Qiwen Jin ◽  
Liang Zhao ◽  
Xiaodan Lin ◽  
Yingchun Wu ◽  
...  

1985 ◽  
Vol 58 (10) ◽  
pp. 3871-3879 ◽  
Author(s):  
M. Strauss ◽  
T. Ring ◽  
A. Bleier ◽  
H. K. Bowen

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3272
Author(s):  
Ellefsen ◽  
Arzig ◽  
Steiner ◽  
Wellmann ◽  
Runde

We have studied the influence of different SiC powder size distributions and the sublimation behavior during physical vapor transport growth of SiC in a 75 mm and 100 mm crystal processing configuration. The evolution of the source material as well as of the crystal growth interface was carried out using in situ 3D X-ray computed tomography (75 mm crystals) and in situ 2D X-ray visualization (100 mm crystals). Beside the SiC powder size distribution, the source materials differed in the maximum packaging density and thermal properties. In this latter case of the highest packaging density, the in situ X-ray studies revealed an improved growth interface stability that enabled a much longer crystal growth process. During process time, the sublimation-recrystallization behavior showed a much smoother morphology change and slower materials consumption, as well as a much more stable shape of the growth interface than in the cases of the less dense SiC source. By adapting the size distribution of the SiC source material we achieved to significantly enhance stable growth conditions.


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