Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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Comparison of the carrier mobilities of annealed P3HT films by using charge carrier extraction by linearly increasing voltage and space-charge limited current

Molecular Crystals and Liquid Crystals ◽

10.1080/15421406.2015.1094865 ◽

2016 ◽

Vol 629 (1) ◽

pp. 193-199 ◽

Cited By ~ 2

Author(s):

Chiho Katagiri ◽

Ken-ichi Nakayama

Keyword(s):

Charge Carrier ◽

Space Charge ◽

Space Charge Limited Current ◽

Limited Current ◽

Carrier Extraction ◽

Space Charge Limited

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Space-charge-limited-current conduction in heteroepitaxial 3C–SiC (111) on TiC (111)

Journal of Materials Research ◽

10.1557/jmr.1992.1816 ◽

1992 ◽

Vol 7 (7) ◽

pp. 1816-1821 ◽

Cited By ~ 3

Author(s):

S.H. Tan ◽

C.P. Beetz ◽

J.M. Carulli ◽

B.Y. Lin ◽

D.F. Cummings

Keyword(s):

Space Charge ◽

Schottky Contacts ◽

Conduction Band Edge ◽

Space Charge Limited Current ◽

Electrical Measurements ◽

Limited Current ◽

Transmission Electron ◽

Current Voltage ◽

Current Conduction ◽

Space Charge Limited

Unintentionally doped 3C–SiC (111) films were grown on TiC (111) substrates. The films were characterized by electrical measurements employing Pt Schottky contacts, optical microscopy, and transmission electron microscopy (TEM). The observed current-voltage (I-V) characteristics appear to be dominated by space-charge-limited-current (SCLC) conduction in the films. Analysis of the I-V characteristics has resulted in information pertaining to the electrically active defects in the films. These active defects are believed to be associated with stacking faults and point defects present in the films and contribute to traps at ∼0.656 eV below the conduction band edge. The concentration of traps was found to vary with film thickness and surface morphology.

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