Spectroscopy of Transition-Metal-Hydrogen Complexes in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Michael Stavola ◽  
S.J. Uftring ◽  
M.J. Evans ◽  
P.M. Williams ◽  
G.D. Watkins
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electrical Properties ◽  
Transition Metal ◽  
Charge State ◽  
Vibrational Spectroscopy ◽  
Structural Information ◽  
Paramagnetic Resonance ◽  
Charge States ◽  
Electron Paramagnetic

AbstractTransition-metal-hydrogen complexes have been introduced into bulk Si samples that contained Pt, Au, or Rh by the indiffusion of hydrogen at 1250°C from H2 gas. The structure and electrical properties of a PtH2 complex in Si have been studied by vibrational spectroscopy and electron paramagnetic resonance (EPR). The PtH2 complex has been found to introduce two levels in the Si bandgap. There is one paramagnetic charge state for which EPR provides detailed structural information and two nonparamagnetic charge states. The hydrogen vibrations of all three charge states of PtH2 have been assigned. In addition to the PtH2 complex, the hydrogen vibrations of several additional complexes in Si samples that contain hydrogen and Pt, Au, or Rh have been identified.

A Study of V3+/4+ Levels in Semi-insulating 6H-SiC using Optical Admittance and Electron Paramagnetic Resonance Spectroscopies

2006 ◽  
Vol 911 ◽  
Author(s):  
Wonwoo Lee ◽  
Mary E Zvanut
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Charge State ◽  
Conduction Band ◽  
Epr Spectroscopy ◽  
Admittance Spectroscopy ◽  
Paramagnetic Resonance ◽  
Characteristic Spectrum ◽  
Epr Measurements ◽  
The Individual ◽  
Electron Paramagnetic

AbstractThe purpose of this study is to identify the vanadium acceptor levels in semi-insulating (SI) 6H-SiC using optical admittance spectroscopy (OAS) and electron paramagnetic resonance (EPR) spectroscopy. OAS conductance peaks near at 0.67 ± 0.02 eV and 0.70 ± 0.02 eV are identified as V3+/4+ levels at the quasi-cubic sites. An OAS peak at 0.87 eV is assigned to the same transition at the hexagonal site. EPR measurements before illumination revealed the characteristic spectrum of V3+. The presence of the V3+ signal supports the identification of the OAS peaks as transitions from the V3+/4+ level to the conduction band. Photo-induced EPR measurements reveal a change in the intensity of V3+ and V4+ at 0.8 ± 0.1 eV, where the amplitude of the V3+ charge state decreases and that of V4+ increases by approximately equal amounts. Although the individual sites are not resolved in the photo-induced EPR data, the 0.8 eV feature strongly supports the assignment of the three OAS peaks as acceptor levels.

Spectroscopy of Proton Implanted GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
M.G. Weinstein ◽  
M. Stavola ◽  
C.Y. Song ◽  
C. Bozdog ◽  
H. Przbylinska ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Vibrational Spectroscopy ◽  
Paramagnetic Resonance ◽  
Tentative Assignment ◽  
Vibrational Bands ◽  
Si Doped ◽  
Proton Implantation ◽  
Optically Detected ◽  
Electron Paramagnetic

AbstractVibrational spectroscopy, photoluminescence, and optically detected electron paramagnetic resonance (ODEPR) have been used to characterize the defects produced in undoped and Si-doped GaN by the implantation of hydrogen. Several new vibrational bands were found near 3100 cm-1 in GaN that had been implanted with protons. These frequencies are close to those predicted for VGa-Hn complexes, leading to the tentative assignment of the new lines to VGa defects decorated with different numbers of H atoms. The proton implantation also produces an infrared PL band centered at 0.95 eV and the ODEPR spectrum labeled LEI, both of which were seen previously for electron-irradiated GaN.

The electron paramagnetic resonance of methylene

1984 ◽  
Vol 62 (12) ◽  
pp. 1724-1730 ◽  
Author(s):  
R. A. Bernheim
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Bond Angle ◽  
Structural Information ◽  
Zero Field ◽  
Paramagnetic Resonance ◽  
Structure Splitting ◽  
Parameters Measurement ◽  
Laser Magnetic Resonance ◽  
Electron Paramagnetic ◽  
Electronic Ground

The electron paramagnetic resonance studies of methylene arc reviewed. The structural information that resulted include verification of the triplet multiplicity of the electronic ground state, the discovery of a bent geometry for the molecule with a bond angle of 134°, measurement of the zero-field or fine-structure splitting parameters, measurement of the g-factor tensor, and measurement of the isotropic and anisotropic 13C hyperfine interaction. The results are compared with recent measurements obtained with laser magnetic resonance techniques and theoretical treatments.

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