Recrystallisation of Preamorphized Silicon Investigated by RBS and PAC

1996 ◽  
Vol 420 ◽  
Author(s):  
G. Rohrlack ◽  
K. Freitag ◽  
R. Vianden ◽  
R. Gwilliam ◽  
B. J. Sealy ◽  
...  

AbstractThe technique of preamorphization is a well-known method to avoid channeling tails of implanted dopants when fabricating devices. This is achieved by implanting a nondopant atom to produce the amorphous layer. We studied the recrystallisation of silicon preamorphized by Si, Ge and Sn implants. The recrystallisation was investigated by RBS and the y-y perturbed angular correlation (PAC) technique. RBS provides information about the thickness and the perfection of the recovered layer. Additional experimental data are supplied by the PAC technique, which used the postimplanted radioactive isotope 111Ina s a probe atom. The recovery of the lattice structure in the vicinity of the probe atoms is monitored on a microscopic scale via the electric field gradient produced at the site of the In nucleus by the surrounding lattice defects. The results are discussed and compared to the RBS data.

2005 ◽  
Vol 19 (24) ◽  
pp. 1213-1221 ◽  
Author(s):  
ERDEM KAMIL YILDIRIM ◽  
RAY DUPREE

The relation between O-17 quadrupolar parameters and the local structure in silicates is of considerable interest if these parameters are to be used as a local probe. Although there are a number of investigations and some theoretical work on Si—O—Si bonds, there seems to be very little experimental data on Si—O—Al bonds. We have therefore investigated a number of sodalites with a general formula of M 8 [AlSiO 4 ]Cl 2 where M is an alkali cation. They have only one oxygen site and a Si:Al ratio of one. By varying the alkali we were able to change the Si—O—Al bond angle about five degrees steps from 125 to 152 degrees. The value of the electric field gradient (EFG), CQ of O-17, followed a roughly similar angular dependence to that found for Si—O—Si bonds with CQ180= 4.2 MHz . The asymmetry parameter of O-17 also behaved in a similar fashion to that found for Si—O—Si bonds although it increased more rapidly at small angles.


1986 ◽  
Vol 34 (4) ◽  
pp. 2982-2984 ◽  
Author(s):  
L. A. Mendoza-Zélis ◽  
L. C. Damonte ◽  
A. G. Bibiloni ◽  
J. Desimoni ◽  
A. R. López-García

2000 ◽  
Vol 55 (1-2) ◽  
pp. 41-44
Author(s):  
A. C. Junqueira ◽  
A. W. Carbonari ◽  
J. Mestnik Filho ◽  
R. N. Saxena

The electric field gradient (efg) at the Nb site in the intermetallic compounds Nb3X (X = Al, In, Si, Ge, Sn) was measured by the Perturbed Angular Correlation (PAC) method using the well-known gamma-gamma cascade of 133 -482 keV in 181Ta from the β- decay of 181Hf, substituting approximately 0.1 atom percent of Nb. The PAC results show that Vzz drops by nearly 40% when X changes from Al to In, and by about 25% when X changes from Si to Ge and Sn. This behavior is most probably related to the change in the degree of sp hybridization in these compounds. The Vzz values of the studied compounds do not follow the well known universal correlation for the efg's in non-cubic metals but the observed trend is well reproduced by results of ab-initio electronic structure calculations. In the case of Nb3 Al a linear temperature dependence of the quadrupole frequencies was observed in the temperature range of 6.5 to 1210 K.


1986 ◽  
Vol 41 (1-2) ◽  
pp. 91-94 ◽  
Author(s):  
K. Królas ◽  
W. Boise ◽  
L. Ziegeler

The quadrupolar coupling betweenthe charge perturbation around fifth-row impurities (Cd, In, Sn and Sb) in silver has been investigatedemploying the perturbed angular correlation technique. A considerable fraction of probenuclei is exposed to a unique electric field gradient which is attributed to the nearest neighbourprobe-impurity configuration resulting from an attractive interaction. The quadrupole couplingconstant increases with impurity valency. A comparison of the present results with those obtainedwith 100Rh nuclear probe indicates that a large probe-dependent contribution to the electric fieldgradient occurs, which is not related to the lattice strain induced by both probe and impurityatoms.


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