Reconstruction of Nonpolar Gan Surfaces
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AbstractA density-functional theory based nonorthogonal tight-binding scheme is used to investigate the nonpolar surfaces of GaN in the wurtzite and zinc-blende phases. In III-V semiconductors the nonpolar surfaces mainly reconstruct by a bond-length conserving rotation of the surface atoms. In contrast to that for all nonpolar GaN surfaces this bond-length is shortened by ≈3 − 4%. We furthermore find the rotation angle to be significantly smaller than could be expected from results for GaAs and GaP.
2007 ◽
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pp. 5609-5613
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pp. 384-392
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2014 ◽
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pp. 14368-14377
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pp. 28330-28343
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