Effects of Hydrogen on Nucleation of Islands During Si(001) Mbe Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
Kazuki Mizushima ◽  
Pavel Šmilauer ◽  
Dimitri D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
High Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Temperature Range ◽  
Kinetic Monte Carlo Simulations

AbstractKinetic Monte Carlo simulations with two species (Si and H) have been performed to identify the mechanism behind the H-induced creation of a strongly temperature-dependent high density of Si islands in the temperature range of 300–550 K during molecular-beam epitaxy on Si(001) surface. A model is proposed to explain this effect as a result of an activated exchange between H and Si at Si island edges.

Kinetic Monte Carlo simulations of nanoscale compositional patterning during film growth of phase-separated systems

2006 ◽  
Vol 73 (23) ◽  
Author(s):  
J. H. He ◽  
C. A. Carosella ◽  
G. K. Hubler ◽  
S. B. Qadri ◽  
J. A. Sprague
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Kinetic Monte Carlo Simulations
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