Effects of Hydrogen on Nucleation of Islands During Si(001) Mbe Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
Kazuki Mizushima ◽  
Pavel Šmilauer ◽  
Dimitri D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
High Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Temperature Range ◽  
Kinetic Monte Carlo Simulations

AbstractKinetic Monte Carlo simulations with two species (Si and H) have been performed to identify the mechanism behind the H-induced creation of a strongly temperature-dependent high density of Si islands in the temperature range of 300–550 K during molecular-beam epitaxy on Si(001) surface. A model is proposed to explain this effect as a result of an activated exchange between H and Si at Si island edges.

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