Characterization Of APB's In GaP

1996 ◽  
Vol 442 ◽  
Author(s):  
Dov Cohen ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Antiphase Boundaries ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam ◽  
Crystallographic Orientations

AbstractAntiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.

Detection of Characteristic Signals from As-Doped (less than 1 at.%) Regions of Silicon by Transmission Electron Microscopy and Convergent-beam Electron Diffraction

2004 ◽  
Vol 10 (S02) ◽  
pp. 338-339
Author(s):  
Masami Terauchi ◽  
Kenji Tsuda ◽  
Hajime Mitsuishi ◽  
Kazuo Kawamura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

scholarly journals Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

Crystals ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 5
Author(s):  
Heiko Groiss
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Strain Relaxation ◽  
Large Angle ◽  
Convergent Beam Electron Diffraction ◽  
Self Organization ◽  
Detailed Knowledge ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam

Dislocations play a crucial role in self-organization and strain relaxation mechanisms in SiGe heterostructures. In most cases, they should be avoided, and different strategies exist to exploit their nucleation properties in order to manipulate their position. In either case, detailed knowledge about their exact Burgers vectors and possible dislocation reactions are necessary to optimize the fabrication processes and the properties of SiGe materials. In this review a brief overview of the dislocation mechanisms in the SiGe system is given. The method of choice for dislocation characterization is transmission electron microscopy. In particular, the article provides a detailed introduction into large-angle convergent-beam electron diffraction, and gives an overview of different application examples of this method on SiGe structures and related systems.

Interface Defects in GaAs and GaAs-AlxGa1−xAs Grown on Ge

1987 ◽  
Vol 104 ◽  
Author(s):  
N.-H. Cho ◽  
S. McKernan ◽  
C. B. Carter ◽  
D. K. Wagner
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Single Crystal ◽  
Convergent Beam Electron Diffraction ◽  
Atomic Configuration ◽  
Antiphase Boundaries ◽  
Beam Electron ◽  
Interface Defects ◽  
The Common ◽  
Convergent Beam

ABSTRACTΣ=3 lateral twin boundaries and a Σ=19 boundary have been investigated by highresolution electron microscopy. The lateral twin boundary was produced by growth on single crystal (110) Ge substrate and was observed to facet parallel to the common (112) plane and the (111)/{115} planes. The Σ=19 boundary was grown on a bicrystal substrate and faceted parallel to the common {331} plane. In this case, convergent-beam electron diffraction was used to determine the polarity of the adjoining grains. A possible model for the atomic configuration is proposed for each of the observed boundaries. GaAs-AlxGa1−xAs heterolayers were grown on a (001) Ge substrates to examine the interaction of antiphase boundaries with heterojunctions.

Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films

1997 ◽  
Vol 3 (5) ◽  
pp. 436-442 ◽  
Author(s):  
Z. Liliental-Weber ◽  
Jack Washburn ◽  
K. Pakula ◽  
J. Baranowski
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Convergent Beam Electron Diffraction ◽  
Electron Microscopy Study ◽  
Transmission Electron Microscopy Study ◽  
Beam Electron ◽  
Transmission Electron ◽  
Interfacial Defects ◽  
Convergent Beam

Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films

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