Interfacial defect engineering and Photocatalysis Properties of hBN/MX2(M = Mo, W, and X = S, Se) Heterostructures

Van der Waals (VDW) heterostructures have attracted significant research interest due to their tunable interfacial properties and potential in a wide range of applications such as electronics, optoelectronic, and heterocatalysis. In this work, the impact of interfacial defects on the electronic structures and photocatalytic properties of hBN/MX2(M = Mo, W, and X = S, Se) are studied using density functional theory calculations. The results reveal that the band alignment of hBN/MX2 can be adjusted by introducing vacancies and atomic doping. The type-I band alignment of the host structure was maintained in the heterostructure with n-type doping in the hBN sublayer. Interestingly, the band alignment changed to the type-II heterostructrue as VB defect and p-type doping was introduced in the hBN sublayer. This could be profitable for the separation of photo-generated electron−hole pairs at the interfaces and is highly desired for heterostructure photocatalysis. In addition, two Z-type heterostructures including hBN(BeB)/MoS2, hBN(BeB)/MoSe2, and hBN(VN)/MoSe2 were achieved, showing reducing band gap and ideal redox potential for water splitting. Our results reveal the possibility of engineering the interfacial and photocatalysis properties of hBN/MX2 heterostructures via interfacial defects.

Microstructure of Ag Nano Paste Joint and Its Influence on Reliability

In this paper, the microstructure of Ag nano paste joint was investigated in pressure-less sintering conditions, and the influence of the microstructure on the joint’s reliability was studied. Firstly, silver nanoparticles (Ag NPs) were synthesized using the redox reaction method. To tightly stack the Ag NPs in nano paste, Ag NPs with sizes of 30~50 nm and submicron-sized Ag particles were mixed. It was found that increasing the sintering temperature or sintering time can reduce the porosity of the bonding layer and the interfacial crack simultaneously, resulting in higher shear strength. When sintering at a temperature of 250 °C, a complete bonding interface was formed, with a 0.68 μm interdiffusion layer. At a higher temperature (300 °C), the bonding interface reached 1.5 μm, providing 35.9 ± 1.7 MPa of shear strength. The reliability of the die attachment was analyzed under thermal shocking from −65 °C to 150 °C for 50 cycles. As the crack could quickly grow through the interfacial defects, the separation ratio was 85% and 67% when sintered at 150 °C and 200 °C, respectively. Because of the reliable bonding interface between the die and the substrate, the Ag nano paste joint formed a slight crack on the edge of the die when sintering at 250 °C. When the joint was sintered at 300 °C, the small voids became large voids, which featured lower resistance to crack growth. Thus, instead of further improved reliability, the separation ratio increased to 37%.

Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting

An anomalous aluminum-mediated material transport process was investigated in sets of Ge-on-Si photodiodes with broadband optoelectrical characteristics measured at wavelengths from 255 nm to 1550 nm. The diodes had “PureGaB” anode regions fabricated by depositing a Ga wetting layer capped with an 11-nm-thick B-layer on 0.5 µm-thick Ge islands grown on Si. The Al metallization was able to reach the Ge-Si interface through ~ 0.1-µm-wide holes inadvertently etched along the perimeter of the Ge-islands, and then traveled along the Ge-Si interface, displacing and recrystallizing Ge and Si. The rest of the Ge surface was protected from the Al contact metallization by the B-layer. For diodes that had received the standard 400°C Al alloying step, the responsivity was near-theoretical at 406 nm and 670 nm, but, at 1310 nm and 1550 nm, the proximity of Ge-Si interfacial defects caused significant attenuation. Extra annealing at 400°C or 500°C enhanced the formation of Si pits that were filled with modified Ge crystals alloyed with Si and p-doped with Al. All these diodes maintained low dark currents, below 50 µA/cm2 at 2 V reverse bias, but the responsivity was degraded, particularly for the long wavelengths. On the other hand, neither responsivity nor degradation of current–voltage (I–V) characteristics was observed for prolonged exposure to normal operating temperatures up to 100°C. Since the direct Al contacting of the Ge sidewalls does not degrade the dark current, for large diodes it could be a low-cost method of obtaining low contact resistance to an anode with p-type sidewall passivation and high fill-factor.