Post-Deposition Annealing and Hydrogenation of Hot-Wire Amorphous and Microcrystalline Silicon Films
Keyword(s):
Hot Wire
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AbstractAmorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition were submitted to thermal annealing and to RF and electron-cyclotron resonance (ECR) hydrogen plasmas. Although the transport properties of the films did not change after these post-deposition treatments, the power density of a Ar+ laser required to crystallize the amorphous silicon films was significantly lowered by the exposure of the films to a hydrogen plasma. This decrease was dependent on the type of hydrogen plasma used, being the strongest for an ECR plasma with the substrate held at a negative bias, followed by an ECR hydrogen plasma with the substrate electrode grounded, and finally by an RF hydrogen plasma.
2001 ◽
Vol 19
(5)
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pp. 2328-2334
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2000 ◽
Vol 266-269
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pp. 385-390
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2014 ◽
Vol 1016
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pp. 305-308