Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

MRS Proceedings ◽

10.1557/proc-482-643 ◽

1997 ◽

Vol 482 ◽

Author(s):

K. C. Zeng ◽

M. Smith ◽

J. Y. Lin ◽

H. X. Jiang ◽

H. Tang ◽

...

Keyword(s):

Quantum Wells ◽

Room Temperature ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Emission Properties ◽

Si Doping ◽

Doping Effects ◽

AbstractEffects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x ∼ 0.07) and InxGa1-xN/GaN (x ∼ 0.15–0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

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Spatio-time-resolved cathodoluminescence studies on the Si-doping effects in high AlN mole fraction AlxGa1−xN multiple quantum wells grown on an AlN template by metalorganic vapor phase epitaxy

2015 15th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2015.7467069 ◽

2015 ◽

Author(s):

S. F. Chichibu ◽

Y. Ishikawa ◽

K. Furusawa ◽

H. Miyake ◽

K. Hiramatsu

Keyword(s):

Quantum Wells ◽

Mole Fraction ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Time Resolved ◽

Si Doping ◽

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Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quantum wells grown on sapphire substrate

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/40/21/012 ◽

2007 ◽

Vol 40 (21) ◽

pp. 6541-6544 ◽

Author(s):

J W Sun ◽

Y M Lu ◽

Y C Liu ◽

D Z Shen ◽

Z Z Zhang ◽

...

Keyword(s):

Quantum Wells ◽

Sapphire Substrate ◽

Room Temperature ◽

Stimulated Emission ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Emission Properties

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Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

Chinese Physics B ◽

10.1088/1674-1056/22/7/076803 ◽

2013 ◽

Vol 22 (7) ◽

pp. 076803 ◽

Author(s):

Wen-Yu Cao ◽

Yong-Fa He ◽

Zhao Chen ◽

Wei Yang ◽

Wei-Min Du ◽

...

Keyword(s):

Quantum Wells ◽

Laser Diode ◽

Diode Structure ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Emission Properties

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Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.4931754 ◽

2015 ◽

Vol 107 (12) ◽

pp. 121602 ◽

Author(s):

S. F. Chichibu ◽

H. Miyake ◽

Y. Ishikawa ◽

K. Furusawa ◽

K. Hiramatsu

Keyword(s):

Quantum Wells ◽

Mole Fraction ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Cation Vacancies ◽

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Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dg07 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DG07 ◽

Author(s):

Ping-Chieh Tsai ◽

Yan-Kuin Su ◽

Wen-Ray Chen ◽

Chun-Yuan Huang

Keyword(s):

Quantum Wells ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Strain Relief ◽

Si Doping ◽

Luminescence Efficiency ◽

Enhanced Luminescence

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In-well ambipolar diffusion in room-temperature InGaAsP multiple quantum wells

IEEE Journal of Quantum Electronics ◽

10.1109/3.863952 ◽

2000 ◽

Vol 36 (9) ◽

pp. 1013-1015 ◽

Author(s):

D. Marshall ◽

A. Miller ◽

C.C. Button

Keyword(s):

Quantum Wells ◽

Room Temperature ◽

Ambipolar Diffusion ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Room-temperature luminescence of excitons in ZnO/(Mg, Zn)O multiple quantum wells on lattice-matched substrates

Applied Physics Letters ◽

10.1063/1.1289066 ◽

2000 ◽

Vol 77 (7) ◽

pp. 975 ◽

Author(s):

T. Makino ◽

C. H. Chia ◽

Nguen T. Tuan ◽

H. D. Sun ◽

Y. Segawa ◽

...

Keyword(s):

Quantum Wells ◽

Room Temperature ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Lattice Matched ◽

Room Temperature Luminescence

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Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3μm

Applied Physics Letters ◽

10.1063/1.2396901 ◽

2006 ◽

Vol 89 (21) ◽

pp. 211122 ◽

Author(s):

C. Reith ◽

S. J. White ◽

M. Mazilu ◽

A. Miller ◽

J. Konttinen ◽

...

Keyword(s):

Quantum Wells ◽

Spin Relaxation ◽

Electron Spin ◽

Room Temperature ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Electron Spin Relaxation ◽

Temperature Electron

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Exciton saturation in GaAs multiple quantum wells at room temperature

Journal of Applied Physics ◽

10.1063/1.371244 ◽

1999 ◽

Vol 86 (7) ◽

pp. 3734-3744 ◽

Author(s):

A. Miller ◽

P. Riblet ◽

M. Mazilu ◽

S. White ◽

T. M. Holden ◽

...

Keyword(s):

Quantum Wells ◽

Room Temperature ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Picosecond Optical Bistability of ZnS-ZnTe/GaAs Multiple Quantum Wells on Reflection at Room Temperature

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.1279 ◽

1995 ◽

Vol 34 (Part 1, No. 2B) ◽

pp. 1279-1281

Author(s):

Dezhen Shen ◽

Xiwu Fan ◽

Baojun Yang

Keyword(s):

Quantum Wells ◽

Optical Bistability ◽

Room Temperature ◽

Multiple Quantum Wells ◽

Multiple Quantum

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