Furnace Annealing of Ion Implanted Polycrystalline Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
J.L. Tandon ◽  
H.B. Harrison ◽  
C.L. Neoh ◽  
K.T. Short ◽  
J.S. Williams
Keyword(s):  
Grain Boundary ◽  
Electrical Activity ◽  
Sheet Resistance ◽  
Polycrystalline Silicon ◽  
Active Sites ◽  
Furnace Annealing ◽  
Dopant Segregation ◽  
Van Der Pauw ◽  
Individual Grains ◽  
Dopant Redistribution

ABSTRACTRutherford backscattering, Van der Pauw and TEM measurements were used to characterise the annealing behaviour of antimony implanted LPCVD polysilicon. High electrical activity without dopant redistribution was obtained for 600°C annealing of 1 × 1015 cm−2 and 3×1015 cm−2 antimony implanted samples. Subsequent annealing at temperatures ≥900° C resulted in considerable grain-boundary-assisted redistribution of antimony within the polycrystalline layers and associated changes in sheet resistance. Our results suggest that the sheet resistance of the films is controlled by dopant segregation at grain boundaries and the fraction of antimony distributed on active sites within individual grains.

Structural Changes During Transient Post-Annealing of Preannealed and Arsenic Implanted Polycrystalline Silicon Films

1985 ◽  
Vol 52 ◽  
Author(s):  
S. J. Krause ◽  
S. R. Wilson ◽  
R. B. Gregory ◽  
W. M. Paulson ◽  
J. A. Leavitt ◽  
...  
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Sheet Resistance ◽  
Network Structure ◽  
Cellular Network ◽  
Polycrystalline Silicon ◽  
Structural Changes ◽  
Silicon Films ◽  
Post Annealing ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films were transient preannealed, As implanted, and transient post-annealed at peak temperatures up to 1250°C for times up to 17.5 seconds. Structural changes occurring during post-annealing were examined by transmission electron microscopy. These results were correlated to Rutherford Backscattering and sheet resistance results. The grain size, which increased from 5–20 to 150–300 nm during preannealing, did not increase during post-annealing. During early stages of post-annealing, As diffused along grain boundaries and generated dislocation sources at grain boundary surfaces. Subsequently, as annealing progressed, a fine, As-rich cellular network structure propagated into the grains until the structure of an entire grain was transformed into a fine cellular network at the longest annealing times. Residual stresses in the film were relieved during formation of the network structure. The sheet resistance of preannealed samples, in comparison with non-preannealed samples with similar implantation and final transient anneals, was lower at shorter annealing times due to the larger grain size, which increased mobility, and the reduced grain boundary area, which trapped less As. It was also lower at longer annealing times due to the formation of the cellular network structure. In subsequent furnace stability tests for 30 minutes at 700–900°C, the sheet resistance increased less for preannealed than for non-preannealed samples.

scholarly journals Observation of Grain Boundary Electrical Activity in Polycrystalline Silicon by Electron Beam Induced Curent (EBIC) Technique

Materia Japan ◽  
2000 ◽  
Vol 39 (12) ◽  
pp. 991-991
Author(s):  
Sadahiro Tsurekawa ◽  
Shu Hamada ◽  
Koichi Kawahara ◽  
Tadao Watanabe ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Grain Boundary ◽  
Electrical Activity ◽  
Polycrystalline Silicon

GRAIN BOUNDARY ELECTRICAL ACTIVITY OF n-TYPE GERMANIUM

1988 ◽  
Vol 49 (C5) ◽  
pp. C5-647-C5-652
Author(s):  
N. TABET ◽  
C. MONTY
Keyword(s):  
Grain Boundary ◽  
Electrical Activity

EVOLUTIONS OF GRAIN BOUNDARY RECOMBINATION ACTIVITY IN POLYCRYSTALLINE SILICON INVESTIGATED BY LBIC MAPPING AND DLTS

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-160-C6-160
Author(s):  
M. PASQUINELLI ◽  
N. M'GAFFAD ◽  
H. AMANRICH ◽  
S. MARTINUZZI
Keyword(s):  
Grain Boundary ◽  
Polycrystalline Silicon ◽  
Recombination Activity
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