GRAIN BOUNDARY ELECTRICAL ACTIVITY OF n-TYPE GERMANIUM

1988 ◽  
Vol 49 (C5) ◽  
pp. C5-647-C5-652
Author(s):  
N. TABET ◽  
C. MONTY
Keyword(s):  
Grain Boundary ◽  
Electrical Activity

scholarly journals Modification of Local Structure and Its Influence on Electrical Activity of Near (310) Σ5 Grain Boundary in Bulk Silicon

2007 ◽  
Vol 48 (2) ◽  
pp. 143-147 ◽  
Author(s):  
Kentaro Kutsukake ◽  
Noritaka Usami ◽  
Kozo Fujiwara ◽  
Yoshitaro Nose ◽  
Takamasa Sugawara ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Electrical Activity ◽  
Local Structure ◽  
Bulk Silicon

The role of secondary phase precipitation on grain boundary electrical activity in Cu2ZnSnS4 (CZTS) photovoltaic absorber layer material

2012 ◽  
Vol 112 (12) ◽  
pp. 124508 ◽  
Author(s):  
Budhika G. Mendis ◽  
Max C. J. Goodman ◽  
Jonathan D. Major ◽  
Aidan A. Taylor ◽  
Ken Durose ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Electrical Activity ◽  
Secondary Phase ◽  
Absorber Layer ◽  
Phase Precipitation ◽  
Layer Material

The Origin Of Electrical Activity At Grain Boundaries In Perovskites

1999 ◽  
Vol 5 (S2) ◽  
pp. 110-111
Author(s):  
Miyoung Kim ◽  
N. D. Browning ◽  
S. J. Pennycook ◽  
K. Sohlberg ◽  
S. T. Pantelides
Keyword(s):  
Grain Boundary ◽  
Electrical Activity ◽  
Grain Boundaries ◽  
Domain Wall Motion ◽  
Positive Temperature Coefficient ◽  
Boundary Structure ◽  
Positive Temperature ◽  
Boundary Misorientation ◽  
Negative Effect ◽  
Set Up

The electrical activity of grain boundaries in perovskites, of which SrTiO3 is a model system, is the basis for their use as capacitors, varistors and positive-temperature coefficient resistors. In related materials this same electrical activity is often detrimental. The outstanding example of a negative effect is the reduction in critical current by several orders of magnitude across grain boundaries in YBa2CU3O7-δ as the boundary misorientation is increased from 0°-45°. Grain boundaries are also likely to profoundly affect properties such as domain wall motion in ferroelectric and magnetic perovskites. The origin of the electrical activity is ubiquitously attributed to the existence of grain boundary donors, usually assumed to be impurities, which set up a double Schottky barrier as they are screened by dopants in the adjacent bulk crystal. We show here, that although electrical barriers can doubtless be modified by dopants, the grain boundary structure itself is the intrinsic origin of the socalled grain boundary donors.

The Origin of Electrical Activity at Grain Boundaries in Perovskites and Related Materials

2000 ◽  
Vol 654 ◽  
Author(s):  
S. J. Pennycook ◽  
M. Kim ◽  
G. Duscher ◽  
N. D. Browning ◽  
K. Sohlberg ◽  
...  
Keyword(s):  
High Temperature ◽  
Grain Boundary ◽  
Energy Loss ◽  
Electrical Activity ◽  
Grain Boundaries ◽  
Electron Energy Loss Spectroscopy ◽  
High Temperature Superconductor ◽  
Atomic Resolution ◽  
Z Contrast ◽  
Electron Energy Loss

In the last few years, the combination of atomic-resolution Z-contrast microscopy, electron energy loss spectroscopy and first-principles theory has proved to be a powerful means for structure property correlations in complex materials1. Here we demonstrate the effectiveness of this combined approach by demonstrating the origins of electrical activity at grain boundaries in the prototypical perovskite SrTiO3 and the high-temperature superconductor YBa2Cu3O7-x, materials that are closely related in structure. We show, both experimentally and theoretically, that grain boundaries in SrTiO3 are intrinsically non-stoichiometric. Electron energy-loss spectroscopy (EELS) provides direct evidence of non-stoichiometry, in agreement with total- energy calculations that predict non-stoichiometric grain boundaries to be energetically favorable. The predicted structures are consistent with atomic-resolution Z-contrast micrographs. These results provide a consistent explanation of the grain boundary charge that was previously inferred from electrical measurements, and provides a microscopic explanation of the resulting “double-Schottky barriers”. We also present experimental evidence for non-stoichiometry at grain boundaries in the high-temperature superconductor YBa2Cu3O7-x, where the same phenomenon explains the observed exponential reduction of critical currents with grain boundary misorientation.

Grain boundary structure and electrical activity in shaped silicon

1990 ◽  
Vol 104 (1) ◽  
pp. 186-190 ◽  
Author(s):  
A. Fedotov ◽  
B. Evtody ◽  
L. Fionova ◽  
Ju. Iliashuk ◽  
E. Katz ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Electrical Activity ◽  
Boundary Structure ◽  
Grain Boundary Structure

Furnace Annealing of Ion Implanted Polycrystalline Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
J.L. Tandon ◽  
H.B. Harrison ◽  
C.L. Neoh ◽  
K.T. Short ◽  
J.S. Williams
Keyword(s):  
Grain Boundary ◽  
Electrical Activity ◽  
Sheet Resistance ◽  
Polycrystalline Silicon ◽  
Active Sites ◽  
Furnace Annealing ◽  
Dopant Segregation ◽  
Van Der Pauw ◽  
Individual Grains ◽  
Dopant Redistribution

ABSTRACTRutherford backscattering, Van der Pauw and TEM measurements were used to characterise the annealing behaviour of antimony implanted LPCVD polysilicon. High electrical activity without dopant redistribution was obtained for 600°C annealing of 1 × 1015 cm−2 and 3×1015 cm−2 antimony implanted samples. Subsequent annealing at temperatures ≥900° C resulted in considerable grain-boundary-assisted redistribution of antimony within the polycrystalline layers and associated changes in sheet resistance. Our results suggest that the sheet resistance of the films is controlled by dopant segregation at grain boundaries and the fraction of antimony distributed on active sites within individual grains.

Sign in / Sign up

Export Citation Format

Share Document