EVOLUTIONS OF GRAIN BOUNDARY RECOMBINATION ACTIVITY IN POLYCRYSTALLINE SILICON INVESTIGATED BY LBIC MAPPING AND DLTS

ABSTRACTIn large grained polycrystalline silicon, the recombination activity of G.B.'s and their passivation by hydrogen is found to be dependent on the decoration by dislocations. Dislocations appear to be preferential paths for in-diffusion, at a depth of a few hundreds of pim's. Similar enhancements of diffusion and passivation exist in grains around dislocations.

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Activation and Passivation of Grain Boundary Recombination Activity in Polycrystalline Silicon

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_20 ◽

1989 ◽

pp. 148-157 ◽

Cited By ~ 8

Author(s):

S. Martinuzzi

Keyword(s):

Grain Boundary ◽

Polycrystalline Silicon ◽

Recombination Activity

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Grain boundary effect on spectral response and effective diffusion length in polycrystalline silicon solar cells

International Journal of Electronics ◽

10.1080/00207218508939094 ◽

1985 ◽

Vol 58 (6) ◽

pp. 981-996 ◽

Cited By ~ 1

Author(s):

A. AGARWAL ◽

D. BANA ◽

B. PRASAD ◽

C. M. SINGAL

Keyword(s):

Solar Cells ◽

Grain Boundary ◽

Polycrystalline Silicon ◽

Diffusion Length ◽

Boundary Effect ◽

Spectral Response ◽

Effective Diffusion ◽

Silicon Solar Cells ◽

Grain Boundary Effect

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Determination of grain‐boundary parameters of polycrystalline silicon by ac electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.341238 ◽

1988 ◽

Vol 64 (9) ◽

pp. 4601-4608 ◽

Cited By ~ 1

Author(s):

A. Romanowski ◽

D. B. Wittry

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Polycrystalline Silicon ◽

Induced Current ◽

Electron Beam Induced Current

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Grain-boundary states and hydrogenation of fine-grained polycrystalline silicon films deposited by molecular beams

Philosophical Magazine B ◽

10.1080/13642819108205949 ◽

1991 ◽

Vol 63 (2) ◽

pp. 443-455 ◽

Cited By ~ 33

Author(s):

D. Jousse ◽

S. L. Delage ◽

S. S. Iyer

Keyword(s):

Grain Boundary ◽

Polycrystalline Silicon ◽

Molecular Beams ◽

Silicon Films ◽

Fine Grained ◽

Boundary States ◽

Polycrystalline Silicon Films

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Comments on: ‘‘Grain boundary diffusion of phosphorus in polycrystalline silicon’’

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.582530 ◽

1983 ◽

Vol 1 (1) ◽

pp. 107 ◽

Cited By ~ 3

Author(s):

Herbert F. Mataré

Keyword(s):

Grain Boundary ◽

Polycrystalline Silicon ◽

Boundary Diffusion ◽

Grain Boundary Diffusion

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Inspection Of Recombination Active Defects For Sige And Solar Cells

MRS Proceedings ◽

10.1557/proc-442-43 ◽

1996 ◽

Vol 442 ◽

Cited By ~ 3

Author(s):

O.V. Astafiev ◽

V.P. Kalinushkin ◽

N.V. Abrosimov

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Light Scattering ◽

Grain Boundary ◽

Single Crystals ◽

Defect Structure ◽

Scattering Method ◽

Recombination Activity ◽

Cell Production ◽

Materials Used

AbstractMapping Low Angle Light Scattering method (MLALS) is proposed to study defect structure in materials used for solar cell production. Several types of defects are observed in Czochralski Si1−xGex (0.022<x<0.047) single crystals. Recombination activity of these defects is investigated. The possibility of contactless visualisation of grain boundary recombination in polysilicon is also demonstrated.

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