Absorption Strengths of Si-H Vibrational Modes in Hydrogenated Silicon

1998 ◽  
Vol 507 ◽  
Author(s):  
W. Beyer ◽  
M.S. Abo Ghazala
Keyword(s):  
Refractive Index ◽  
Hydrogen Concentration ◽  
Infrared Absorption ◽  
Molecular Hydrogen ◽  
Vibrational Modes ◽  
Absorption Data ◽  
Hydrogenated Silicon ◽  
Hydrogen Density ◽  
The Absolute ◽  
Hydrogen Effusion

ABSTRACTInfrared absorption data of various Si:H samples involving several series of a-Si:H films as well as µc-Si:H and c-Si:H samples were analyzed to obtain ratios of the absorption strengths A of the Si-H stretching modes at 2000 and 2100 cm−1 and of the Si-H wagging mode at 640 cm−1. Hydrogen effusion measurements were used to obtain the absolute values of A. The results suggest essentially equal absorption strengths for the two Si-H stretching modes and a ratio of wagging and stretching absorption strengths independent of hydrogen density NH. Films with predominant 2100 cm−1stretching absorption show a stronger sample dependence of A than observed for samples with predominant 2000 cm−1absorption. A slight increase of the absorption strength of the Si-H wagging and stretching modes with rising hydrogen concentration is observed for a-Si:H films and is attributed to the decrease of the refractive index. Enhanced A values of µc-Si:H samples compared to a-Si:H samples point to the presence of molecular hydrogen.

High-accuracy interferometer with a prism pair for measurement of the absolute refractive index of glass

2009 ◽  
Vol 48 (11) ◽  
pp. 2045 ◽  
Author(s):  
Yasuaki Hori ◽  
Akiko Hirai ◽  
Kaoru Minoshima ◽  
Hirokazu Matsumoto
Keyword(s):  
Refractive Index ◽  
High Accuracy ◽  
Absolute Refractive Index ◽  
The Absolute ◽  
Prism Pair

EXPERIMENTAL STUDIES OF SOLUTION PROCESSES: VI. EFFECT OF SOLVENT ON INFRARED ABSORPTION SPECTRA

1960 ◽  
Vol 38 (10) ◽  
pp. 1921-1926 ◽  
Author(s):  
P. A. D. De Maine ◽  
L. H. Daly ◽  
M. M. De Maine
Keyword(s):  
Infrared Absorption ◽  
Experimental Studies ◽  
Absorption Data ◽  
Frequency Shifts ◽  
Extinction Coefficients ◽  
Effect Of Solvent ◽  
Solution Processes ◽  
Pure Substances ◽  
Infrared Absorption Spectra ◽  
Molar Extinction Coefficients

Here are reported infrared absorption data between 4000 cm−1 and 700 cm−1 near 19 °C for methanol, n-propanol, isopropanol, cyclohexanol, benzyl alcohol, diethyl ether, anisole, 1,4-dioxane, diisopropyl ether, nitromethane, acetone, p-xylene, benzene, and hexane as pure substances and in carbon tetrachloride solution. Band frequencies accurate to within 1 cm−1 are reported. Except for the 3340 cm−1 band in dilute MeOH solutions no frequency shifts were observed even with gross changes of the electrical properties of the solutions. Molar extinction coefficients at absorption maxima are discussed briefly.

Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon

2010 ◽  
Vol 159 ◽  
pp. 163-166 ◽  
Author(s):  
S. Alexandrova ◽  
A. Szekeres
Keyword(s):  
Refractive Index ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxide Thickness ◽  
Hydrogenated Silicon ◽  
Oxide Structure ◽  
Interface Parameters

In the present paper we discuss the defects at the oxide/Si interface and the structure of silicon oxide films grown on plasma hydrogenated (100) and (111)Si. The effect of oxide thickness ranging from 7 to 40 nm on the interface parameters was examined. Electrically active defects were characterized through C-V and G-V measurements. The dependence of the refractive index on oxide thickness was studied. Information on the oxide structure was inferred through the refractive index evaluated from ellipsometric measurements. From both, the electrical and optical results a characteristic oxide thickness was found, below which the oxide structure is different from SiO2, most probably SiOх. It is related to a modified Si surface during the pre-oxidation plasma treatment and its value depends on Si orientation and pre-clean conditions. A characteristic oxide thickness of 13 nm was found for Si hydrogenated without heating and, of 9 nm for Si hydrogenated at 300oC.

Oxygen-Nitrogen Interactions in Ion-Implanted Silicon

1985 ◽  
Vol 46 ◽  
Author(s):  
H. J. Stein
Keyword(s):  
Infrared Absorption ◽  
Crystalline Silicon ◽  
Vibrational Modes ◽  
Absorption Bands ◽  
Infrared Absorption Bands ◽  
Ion Implanted

AbstractInteraction of oxygen and nitrogen in ion-implanted crystalline silicon layers has been investigated by infrared absorption. Infrared absorption bands which are not produced by either 14N or 160 alone are observed after sequential implantation of 14N and 160 into overlapping profiles followed by annealing at 500°C. The new bands indicate oxygen - nitrogen interactions and are ascribed to Si-N vibrational modes with oxygen in nearby interstitial sites.

Diffusion and Effusion of Hydrogen in Microcrystalline Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
W. Beyer ◽  
P. Hapke ◽  
U. Zastrow
Keyword(s):  
Diffusion Coefficient ◽  
Infrared Absorption ◽  
Cyclotron Resonance ◽  
Hydrogen Diffusion ◽  
Electron Cyclotron Resonance ◽  
Microcrystalline Silicon ◽  
Hydrogen Diffusion Coefficient ◽  
Internal Surfaces ◽  
Substrate Temperatures ◽  
Hydrogen Effusion

ABSTRACTThe diffusion and effusion of hydrogen in hydrogenated microcrystalline silicon films deposited in an electron cyclotron resonance reactor were studied for various deposition temperatures Ts. For deposition temperatures below 250°C, hydrogen effusion is found to be dominated by desorption of hydrogen from internal surfaces followed by rapid out-diffusion of H2. Higher substrate temperatures result in an increased hydrogen stability suggesting the growth of a more compact material. For this latter type of samples, a hydrogen diffusion coefficient similar as in compact plasma-grown a-Si:H films is found despite a different predominant bonding of hydrogen according to infrared absorption.

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