Theoretical Analysis of Fowler Nordheim Parameterization and RLC Characteristics for Ring Cathode Field Emitter Arrays for Next Generation RF Amplifiers

1998 ◽  
Vol 509 ◽  
Author(s):  
K. L. Jensen

AbstractOf all applications for which field emitter arrays (FEAs) are being designed, RF vacuum microelectronics is the most technically challenging application. The current density is typically three orders of magnitude larger than that required for displays (which require < 0.1 A/cm2). Due to their high current density capabilities and instant turn-on, FEAs may be a promising alternative to thermionic emitters for use in Inductive Output Amplifiers (IOAs). An analytical model of a field emitter is used to estimate Fowler Nordheim A and B parameters, effective resistance and capacitance of the array under several GHz modulation, signal propogation lengths, total current and current density, and effects of emitter non-uniformity on the basis of array geometry and materials. Estimates of inductance, resistance, and capacitance are made to estimate the drive power required to produce a bunched electron beam for Inductive Output Amplifier applications. An electronic efficiency of 32% with 15 dB gain may be possible from an array producing 260 mA peak, 71 mA average, current at 10 GHz using a TWT helix 1.51 cm long.

1994 ◽  
Vol 349 ◽  
Author(s):  
B. H. Fishbine ◽  
C. J. Miglionico ◽  
K. E. Hackett ◽  
K. J. Hendricks

ABSTRACTBuckytubes are considered for high current density cold field emitter array electron sources. They may provide more stable, higher-brightness emission than existing cold field emitter arrays.


2000 ◽  
Vol 621 ◽  
Author(s):  
M. Nagao ◽  
H. Tanabe ◽  
T. Kobayashi ◽  
T. Matsukawa ◽  
S. Kanemaru ◽  
...  

ABSTRACTVacuum packaging is a very important issue for vacuum microelectronics devices, especially for field emission displays. Emission current from the field emitter array (FEA), however, is known to decrease significantly after the vacuum packaging process. The current decrease is caused by heating treatment in the vacuum sealing process. In the present paper, the effect of the heating treatment on Si FEA was investigated and CHF3 plasma treatment was proposed for avoiding the problem. The Si FEA was exposed to plasma for 15sec and emission characteristics were measured before and after the vacuum sealing process using frit. It was confirmed that CHF3 plasma treatment was very effective for avoiding the emission degradation of the Si FEA. Details of the heating damage and CHF3 plasma treatment are described.


2009 ◽  
Vol 1173 ◽  
Author(s):  
Hidetoshi Matsumoto ◽  
Kenichi Suzuki ◽  
Kazuma Tsuboi ◽  
Mie Minagawa ◽  
Akihiko Tanioka ◽  
...  

AbstractThermal-stable, conductive, and flexible carbon fabric (CF), which is composed of thin carbon fibers prepared by electrospinning, was used for the substrate of carbon nanotube (CNT) field emitter arrays. The field emitter arrays were prepared by chemical vapor deposition (CVD). The current density-electric field characteristics revealed that the CNT field emitter arrays on CF produced a higher current density at a lower turn-on voltage compared to ones on a Si substrate. This emitter integrated with a gate electrode based on hierarchy-structured carbon materials, CNTs on CF, can be used for light sources, displays, and other electronic devices.


1991 ◽  
Vol 38 (10) ◽  
pp. 2355-2363 ◽  
Author(s):  
C.A. Spindt ◽  
C.E. Holland ◽  
A. Rosengreen ◽  
I. Brodie

2000 ◽  
Vol 620 ◽  
Author(s):  
M. Nagao ◽  
H. Tanabe ◽  
T. Kobayashi ◽  
T. Matsukawa ◽  
S. Kanemaru ◽  
...  

ABSTRACTVacuum packaging is a very important issue for vacuum microelectronics devices, especially for field emission displays. Emission current from the field emitter array (FEA), however, is known to decrease significantly after the vacuum packaging process. The current decrease is caused by heating treatment in the vacuum sealing process. In the present paper, the effect of the heating treatment on Si FEA was investigated and CHF3 plasma treatment was proposed for avoiding the problem. The Si FEA was exposed to plasma for 15sec and emission characteristics were measured before and after the vacuum sealing process using frit. It was confirmed that CHF3 plasma treatment was very effective for avoiding the emission degradation of the Si FEA. Details of the heating damage and CHF3 plasma treatment are described.


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