Surface Modification of Si Field Emitter Arrays for Vacuum Sealing

MRS Proceedings ◽

10.1557/proc-621-q1.3.1 ◽

2000 ◽

Vol 621 ◽

Cited By ~ 2

Author(s):

M. Nagao ◽

H. Tanabe ◽

T. Kobayashi ◽

T. Matsukawa ◽

S. Kanemaru ◽

...

Keyword(s):

Plasma Treatment ◽

Vacuum Packaging ◽

Field Emitter ◽

Vacuum Sealing ◽

Field Emitter Arrays ◽

Vacuum Microelectronics ◽

Field Emission Displays ◽

Before And After ◽

Heating Treatment ◽

Field Emitter Array

ABSTRACTVacuum packaging is a very important issue for vacuum microelectronics devices, especially for field emission displays. Emission current from the field emitter array (FEA), however, is known to decrease significantly after the vacuum packaging process. The current decrease is caused by heating treatment in the vacuum sealing process. In the present paper, the effect of the heating treatment on Si FEA was investigated and CHF3 plasma treatment was proposed for avoiding the problem. The Si FEA was exposed to plasma for 15sec and emission characteristics were measured before and after the vacuum sealing process using frit. It was confirmed that CHF3 plasma treatment was very effective for avoiding the emission degradation of the Si FEA. Details of the heating damage and CHF3 plasma treatment are described.

Gold Overcoatings on Spindt-Type Field Emitter Arrays

MRS Proceedings ◽

10.1557/proc-424-387 ◽

1996 ◽

Vol 424 ◽

Cited By ~ 1

Author(s):

S. L. Skala ◽

D. A. Ohlberg ◽

A. A. Talin ◽

T. E. Felter

Keyword(s):

Electron Emission ◽

Current Noise ◽

Gold Deposition ◽

Field Emitter ◽

Emission Properties ◽

Turn On ◽

Field Emitter Arrays ◽

Before And After ◽

Emitter Array ◽

Field Emitter Array

ABSTRACTThe electron emission properties of a Spindt-type field emitter array have been measured before and after deposition of approximately 100 Å of gold. The workfunction of the emitter decreased by 5% after gold deposition resulting in an 11% reduction in turn-on voltage. Emission stability as measured by RMS current noise improved by 40%. Improvements in emission do not withstand exposure to air. However, baking at moderate temperatures (200°C) restores the emission improvements obtained with the gold overcoating. Fowler-Nordheim plots show that the enhanced emission after baking is due to a increase of the Fowler-Nordheim intercept and not a decrease in slope. Additionally, the gold over coatings resist poisoning as a 50,000 L dose of oxygen only slightly affects emission.

CHF3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.l755 ◽

2000 ◽

Vol 39 (Part 2, No. 7B) ◽

pp. L755-L756 ◽

Cited By ~ 7

Author(s):

Masayoshi Nagao ◽

Hisao Tanabe ◽

Takashi Matsukawa ◽

Seigo Kanemaru ◽

Junji Itoh

Keyword(s):

Plasma Treatment ◽

Vacuum Packaging ◽

Field Emitter ◽

Field Emitter Arrays

Field-Emitter Arrays for RF Vacuum Microelectronics

10.21236/ada248726 ◽

1992 ◽

Author(s):

C. A. Spindt ◽

A. Rosengreen

Keyword(s):

Field Emitter ◽

Field Emitter Arrays ◽

Vacuum Microelectronics

Nanocone-Shaped Carbon Nanotubes Field-Emitter Array Fabricated by Laser Ablation

Nanomaterials ◽

10.3390/nano11123244 ◽

2021 ◽

Vol 11 (12) ◽

pp. 3244

Author(s):

Jiuzhou Zhao ◽

Zhenjun Li ◽

Matthew Thomas Cole ◽

Aiwei Wang ◽

Xiangdong Guo ◽

...

Keyword(s):

Carbon Nanotubes ◽

Laser Ablation ◽

High Performance ◽

Low Cost ◽

Field Emitter ◽

Beam Focusing ◽

Field Emitter Arrays ◽

Emitter Array ◽

Field Emitter Array ◽

Tip Radius

The nanocone-shaped carbon nanotubes field-emitter array (NCNA) is a near-ideal field-emitter array that combines the advantages of geometry and material. In contrast to previous methods of field-emitter array, laser ablation is a low-cost and clean method that does not require any photolithography or wet chemistry. However, nanocone shapes are hard to achieve through laser ablation due to the micrometer-scale focusing spot. Here, we develop an ultraviolet (UV) laser beam patterning technique that is capable of reliably realizing NCNA with a cone-tip radius of ≈300 nm, utilizing optimized beam focusing and unique carbon nanotube–light interaction properties. The patterned array provided smaller turn-on fields (reduced from 2.6 to 1.6 V/μm) in emitters and supported a higher (increased from 10 to 140 mA/cm2) and more stable emission than their unpatterned counterparts. The present technique may be widely applied in the fabrication of high-performance CNTs field-emitter arrays.

Field-emitter arrays for vacuum microelectronics

IEEE Transactions on Electron Devices ◽

10.1109/16.88525 ◽

1991 ◽

Vol 38 (10) ◽

pp. 2355-2363 ◽

Cited By ~ 271

Author(s):

C.A. Spindt ◽

C.E. Holland ◽

A. Rosengreen ◽

I. Brodie

Keyword(s):

Field Emitter ◽

Field Emitter Arrays ◽

Vacuum Microelectronics

Graphene Nanotubule Cold Field Emission Electron Sources

MRS Proceedings ◽

10.1557/proc-349-319 ◽

1994 ◽

Vol 349 ◽

Cited By ~ 4

Author(s):

B. H. Fishbine ◽

C. J. Miglionico ◽

K. E. Hackett ◽

K. J. Hendricks

Keyword(s):

Field Emission ◽

Current Density ◽

High Current Density ◽

High Current ◽

Field Emitter ◽

Electron Sources ◽

Field Emitter Arrays ◽

Emission Electron ◽

Emitter Array ◽

Field Emitter Array

ABSTRACTBuckytubes are considered for high current density cold field emitter array electron sources. They may provide more stable, higher-brightness emission than existing cold field emitter arrays.

Theoretical Analysis of Fowler Nordheim Parameterization and RLC Characteristics for Ring Cathode Field Emitter Arrays for Next Generation RF Amplifiers

MRS Proceedings ◽

10.1557/proc-509-3 ◽

1998 ◽

Vol 509 ◽

Author(s):

K. L. Jensen

Keyword(s):

Current Density ◽

High Current Density ◽

Drive Power ◽

Promising Alternative ◽

Field Emitter ◽

Field Emitter Arrays ◽

Vacuum Microelectronics ◽

Average Current ◽

Output Amplifier ◽

Electronic Efficiency

AbstractOf all applications for which field emitter arrays (FEAs) are being designed, RF vacuum microelectronics is the most technically challenging application. The current density is typically three orders of magnitude larger than that required for displays (which require < 0.1 A/cm2). Due to their high current density capabilities and instant turn-on, FEAs may be a promising alternative to thermionic emitters for use in Inductive Output Amplifiers (IOAs). An analytical model of a field emitter is used to estimate Fowler Nordheim A and B parameters, effective resistance and capacitance of the array under several GHz modulation, signal propogation lengths, total current and current density, and effects of emitter non-uniformity on the basis of array geometry and materials. Estimates of inductance, resistance, and capacitance are made to estimate the drive power required to produce a bunched electron beam for Inductive Output Amplifier applications. An electronic efficiency of 32% with 15 dB gain may be possible from an array producing 260 mA peak, 71 mA average, current at 10 GHz using a TWT helix 1.51 cm long.

Arcing and voltage breakdown in vacuum microelectronics microwave devices using field emitter arrays: Causes, possible solutions, and recent progress

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589924 ◽

1998 ◽

Vol 16 (2) ◽

pp. 880 ◽

Cited By ~ 47

Author(s):

Francis Charbonnier

Keyword(s):

Recent Progress ◽

Microwave Devices ◽

Field Emitter ◽

Field Emitter Arrays ◽

Vacuum Microelectronics ◽

Voltage Breakdown

Fabrication Technologies of Field Emitter Arrays

MRS Proceedings ◽

10.1557/proc-471-211 ◽

1997 ◽

Vol 471 ◽

Author(s):

J. H. Choi ◽

Y. S. Ryu ◽

J. H. Kang ◽

J. E. Jang ◽

J. M. Kim ◽

...

Keyword(s):

Laser Power ◽

Total Internal Reflection ◽

Field Emitter ◽

Field Emitter Arrays ◽

Scan Speed ◽

Basic Parameters ◽

Emitter Array ◽

Field Emitter Array ◽

Tip Formation ◽

Step Distance

ABSTRACTTotal internal reflection (TIR) holographic lithography is studied as a new method for field emitter array (FEA) fabrication. Four basic parameters of the process - scan speed, laser power, focus distance and step distance, are analyzed to optimize the hole patterns. In addition, the characteristics of the Aluminum (Al) parting layer are studied to minimize the stress produced by Molybdenum (Mo) layer during Spindt-type tip formation process.