X-Ray Absorption Fine Structure (Xafs) Studies Of Cobalt Silicide Thin Films

1998 ◽  
Vol 524 ◽  
Author(s):  
S. J. Naftel ◽  
I Coulthard ◽  
Y. Hu ◽  
T. K. Sham ◽  
M. Zinke-Allmang
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Fluorescence Yield ◽  
Sputter Deposition ◽  
Cobalt Silicide ◽  
Total Electron ◽  
X Ray ◽  
Absorption Fine ◽  
Fine Structures ◽  
X Ray Absorption

ABSTRACTCobalt silicide thin films, prepared on Si(100) wafers, have been studied by X-ray absorption near edge structures (XANES) at the Si K-, L2,3 and Co K-edges utilizing both total electron (TEY) and fluorescence yield (FLY) detection as well as extended X-ray absorption fine structure (EXAFS) at the Co K-edge. Samples made using DC sputter deposition on clean Si surfaces and MBE were studied along with a bulk CoSi2 sample. XANES and EXAFS provide information about the electronic structure and morphology of the films. It was found that the films studied have essentially the same structure as bulk CoSi2. Both the spectroscopy and materials characterization aspects of XAFS (X-ray absorption fine structures) are discussed.

Structure of magnetic thin films and nanostructures studied by extended X-ray absorption fine structure

2000 ◽  
Vol 454-456 ◽  
pp. 723-728 ◽  
Author(s):  
H. Magnan ◽  
P. Le Fèvre ◽  
A. Midoir ◽  
D. Chandesris ◽  
H. Jaffrès ◽  
...  
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Magnetic Thin Films ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

Study by Extended X-ray Absorption Fine Structure Technique and Microscopy of the Amorphous State of Titanium Diboride Thin Films

1988 ◽  
Vol 71 (11) ◽  
pp. 948-955 ◽  
Author(s):  
ALAIN E. KALOYEROS ◽  
WENDELL S. WILLIAMS ◽  
RICHARD B. RIZK ◽  
FREDERICK C. BROWN ◽  
ALEX E. GREENE
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Titanium Diboride ◽  
Amorphous State ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

VUV- and Soft X-Ray-Induced Optical Luminescence and X-Ray Absorption Fine Structures of Porous Silicon

1992 ◽  
Vol 281 ◽  
Author(s):  
T. K. Sham ◽  
D. T. Jiang ◽  
I. Coulthard ◽  
J. W. Lorimer ◽  
X. H. Feng ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Absorption Fine ◽  
Electron Yield ◽  
Optical Luminescence ◽  
Fine Structures ◽  
X Ray Absorption ◽  
Uv Excitation

ABSTRACTOptical luminescence in porous silicon induced by soft X-ray and vacuum UV excitation with energies in the vicinity of the Si K-edge (1838 eV) and the Si L-edge (99 eV) has been observed. The luminescence has been used, together with total electron yield, to record X-ray absorption fine structure (XAFS) in the near-edge region of both Si edges. The near- edge spectra recorded simultaneously with either luminescence or total electron yield were compared, and the implications of these measurements for the structure of porous silicon are discussed.

Near edge X-ray absorption fine structure study of Zn[sub 0.8]Mg[sub 0.2]O thin films

2013 ◽  
Author(s):  
Ankush Vij ◽  
Amanpal Singh ◽  
Ravi Kumar ◽  
Sanjeev Gautam ◽  
Dinesh Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Structure Study ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

Surface Structure of MgO Thin Films Revealed from X-ray Reflectivity and Near-Edge X-ray Absorption Fine Structure Measurements

2018 ◽  
Vol 10 (9) ◽  
pp. 1372-1376 ◽  
Author(s):  
Jitendra Pal Singh ◽  
Weon Cheol Lim ◽  
Ik-Jae Lee ◽  
Sung OK Won ◽  
Keun Hwa Chae
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Surface Structure ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption
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