Studies of Plasticity in Thin Al Films Using Picosecond Ultrasonics

1999 ◽  
Vol 594 ◽  
Author(s):  
G. A. Antonelli ◽  
H. J. Maris
Keyword(s):  
Thermal Stress ◽  
Sound Velocity ◽  
Plastic Flow ◽  
Transit Time ◽  
Light Pulse ◽  
Metal Films ◽  
New Technique ◽  
Thin Metal Films ◽  
A New Technique ◽  
Strain Pulse

AbstractWe have developed a new technique for the study of the onset of plastic flow in thin metal films. A sub-picosecond light pulse is absorbed at the upper surface of the film. This generates a strain pulse that propagates through the film to the substrate and then back to the upper surface of the film where it is detected. When the temperature of the film is changed, there is a change in the transit time of the strain pulse. This change arises from the variation of the sound velocity with temperature, and also has a contribution from thermal stress in the film. By making accurate measurements of the transit time, we are able to identify the onset of plastic flow in the film.

Thermal stress in thin metal films

1969 ◽  
Vol 12 (7) ◽  
pp. 930-932
Author(s):  
E. A. Gorokhov ◽  
V. I. Popov ◽  
V. A. Buravikhin
Keyword(s):  
Thermal Stress ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

A new technique for coupled plane thermal stress problems

1982 ◽  
Vol 17 (3) ◽  
pp. 133-138 ◽  
Author(s):  
Y Takeuti ◽  
Y Tanigawa
Keyword(s):  
Thermal Stress ◽  
Sudden Change ◽  
New Technique ◽  
Stress Distributions ◽  
Inertia Effect ◽  
Thermoelastic Coupling ◽  
Coupling Term ◽  
Time Period ◽  
Rigorous Treatment ◽  
A New Technique

It is well known that the thermoelastic coupling term and the inertia term have to be taken into account for a rigorous treatment of a sudden change of temperature in a elastic body. It is now well understood that the inertia effect may disappear in pure thermal stress problems on the stress distribution for realistic materials. In the present paper, we propose a new technique for the coupled thermoelastic fields by introducing an additive harmonic function. Thus, we can obtain exact solution for all the time period. The effect of thermoelastic coupling on the temperature and the stress distributions is shown in the numerical example.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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