Growth and Magnetic Properties of La0.65Pb0.35MnO3 Films

1999 ◽  
Vol 602 ◽  
Author(s):  
Q. L. Xu ◽  
M. T. Liu ◽  
Y. Liu ◽  
C. N. Borca ◽  
H. Dulli ◽  
...  

AbstractWe have successfully grown La0.65PbO.35MnO3 thin films by a RF magnetron sputtering method onto (100) LaAlO3 single crystal substrates. X-ray diffraction measurements are consistent with a (100) cubic orientation of the films. The fourfold symmetry showed by LEED(Low Energy Electron Diffraction) patterns indicate that the films have surface order. STM(Scanning Tunneling Microscopy) measurements indicate that the surface of the films were smooth, with approximate 5 nm roughness. XPS (X-ray Photoemission Spectroscopy) shows that the surface defect density in the films is comparatively low. The bulk magnetization of the films at 6K in 1 T magnetic field reached 77 emu/g and a Curie temperature near 354 K, close to maximum resistivity. A negative magnetoresistance of 47% was observed at 320K in 5.5 T magnetic field.

1995 ◽  
Vol 10 (10) ◽  
pp. 2518-2522 ◽  
Author(s):  
Brandon W. Chung ◽  
Eric L. Brosha ◽  
Fernando H. Garzon ◽  
Ian D. Raistrick ◽  
Robert J. Houlton ◽  
...  

We have grown thin films of La0.84Sr0.16MnO3 on SrTiO3 (100), MgO (100), CeO2 (100)/Al2O3, and (100) oriented yttria-stabilized zirconia (YSZ) substrates by using a 90°off-axis RF magnetron sputtering deposition. X-ray diffraction analysis and ion beam channeling experiments reveal that the deposited films grow epitaxially on SrTiO3, biaxially textured on MgO, and highly textured on YSZ. Scanning tunneling microscopy reveals that the thin films possess extremely smooth surfaces.


1992 ◽  
Vol 263 ◽  
Author(s):  
O. Lang ◽  
R. Schlaf ◽  
Y. Tomm ◽  
C. Pettenkofer ◽  
W. Jaegermann

ABSTRACTGaSe layers were grown on the van der Waals (0001) planes of WSe2 (van der Waals epitaxy). The substrate (0001) plane was cleaned in UHV by heating to 400°C. GaSe was deposited from resistively heated Knudsen cells at T=300° C. After annealing at 450°C an epitaxial GaSe overlayer is formed as evidenced by X-ray diffraction, scanning tunneling microscopy, low energy electron diffraction and photoelectron spectroscopy.


2001 ◽  
Vol 89 (1) ◽  
pp. 181-187 ◽  
Author(s):  
C. M. Schmidt ◽  
D. E. Bürgler ◽  
D. M. Schaller ◽  
F. Meisinger ◽  
H.-J. Güntherodt ◽  
...  

1990 ◽  
Vol 209 ◽  
Author(s):  
G. P. E. M. Van Bakell ◽  
J. Th. M. De Hosson ◽  
T. Hibma

ABSTRACTStructural features of TiS2 were studied by scanning tunneling microscopy (STM) and single-crystal X-ray diffraction was applied as a complementary technique. STM images in air and at room temperature revealed, beside the trigonal symmetry of the lattice, several new features having this symmetry as well. We conclude that these features not only are to be described by structural defect phenomena which affect octahedral sites in the 1T-CdI2 structure but tetrahedral sites as well. Sample orientation determination by X-ray diffraction provides a unique relation between feature types and sites. A model is proposed in which displaced Ti atoms account for the observed features.


2012 ◽  
Vol 85 (23) ◽  
Author(s):  
S. Meyer ◽  
T. E. Umbach ◽  
C. Blumenstein ◽  
J. Schäfer ◽  
R. Claessen ◽  
...  

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